Режимы роста пленок нитрида алюминия на гибридных подложках SiC/Si(111)

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

Manufacturing and metallization of hybrid thermoplastic-thermoset matrix composites

Metallization is a common strategy employed to enhance the electrical and thermal conductivity of polymer matrix composite materials. Nevertheless, metallic deposition on polymer-based materials is challenging due to the inherent limitations related to high temperature exposure of the substrate. In this article, a new technique for the manufacturing of composite laminates and the subsequent metallization by cold spraying of metallic powder is presented. The composite manufacturing route is based on the production of thermoplastic-thermoset hybrid substrates and consisted of two main stages: in the first stage the partial impregnation of a reinforcement textile by a thermoplastic film was promoted by hot pressing compaction. Afterwards, the prepared lamina was vacuum bagged with other reinforcing layers and impregnated by the thermoset catalyzed resin by a vacuum infusion process. Finally, the thermoset and thermoplastic layers were co-cured to increase the adhesion of the substrate with the thermoplastic film. The metallization of composite laminate was obtained through the cold spraying technique, depositing powders on the thermoplastic surface layer. The effect of processing parameters on the coating deposition, quality and microstructure was reported and discussed.

Nonlinear terahertz effects of gold nanofilms

Nonlinear interaction between strong-field terahertz electromagnetic waves and matters will become one of the next hot research frontiers in nonlinear optics. However, the lack of strong terahertz radiation sources and appropriate nonlinear terahertz materials have impeded its progress. Here we systematically have investigated the strong-field terahertz nonlinear effects of gold (Au) nanofilms on different substrates, including SiO2, high-resistivity Si and SiO2-high-resistivity Si hybrid substrates. The strong-field terahertz waves are emitted from lithium niobate crystals via tilted pulse front technique, and obvious nonlinear transmission responses are observed along with varying the incident field strengths for all the Au samples on the three types of the substrates. The nonlinear behavior is enhanced when the gold nanofilm thickness increases, which can be qualitatively understood by introducing the quantum tunneling effect and carrier multiplication theory generated at the Au nano-slits under the illumination of the strong-field terahertz pulses. Our demonstrations not only open a new paradigm for nonlinear terahertz investigations and future high-speed terahertz devices, but also provide an effective platform for exploring extreme terahertz sciences.

Самоорганизация состава пленок Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N, выращенных на гибридных подложках SiC/Si

Using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer (EDS), the phenomenon of self-organized change in the composition of AlxGa1-xN epitaxial layers during their growth by chloride-hydride epitaxy (EDX) on SiC / Si (111) hybrid substrates was revealed. It was found that during the growth of AlxGa1-xN layers with a low, about 11-24% Al content, interlayers (domains) appear, consisting of AlGaN stoichiometric composition. A qualitative model has been proposed, according to which self-organization in composition arises due to the effect of two processes on the growth kinetics of the AlxGa1-xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the AlN formation reaction; the second is the reaction of GaN formation. The second process, closely related to the first, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1-xN films by the CGE method on SiC / Si (111). Both processes influence each other, which leads to a complex pattern of aperiodic changes in the composition over the thickness of the film layer. Keywords: A3B5 compounds, wide-gap semiconductors, AlGaN, AlN, GaN, silicon carbide on silicon, self-organization of the composition, HVPE method, solid solutions, heterostructures.