Режимы роста пленок нитрида алюминия на гибридных подложках SiC/Si(111)
Keyword(s):
The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.
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2020 ◽
Vol 3
(7)
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pp. 6222-6231
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1993 ◽
Vol 127
(1-4)
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pp. 213-216
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Keyword(s):
2003 ◽
Vol 10
(04)
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pp. 641-648
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