Extremely high upper critical field in BiCh2-based (Ch: S and Se) layered superconductor LaO0.5F0.5BiS2−xSex (x = 0.22 and 0.69)

Centrosymmetric compounds with local inversion symmetry breaking have tremendously interesting and intriguing physical properties. In this study, we focus on a BiCh2-based (Ch: S, Se) layered superconductor, as a system with local inversion asymmetry, because spin polarisation based on the Rashba–Dresselhaus-type spin–orbit coupling has been observed in centrosymmetric BiCh2-based LaOBiS2 systems, while the BiCh2 layer lacks local inversion symmetry. Herein, we report the existence of extremely high in-plane upper critical fields in the BiCh2-based system LaO0.5F0.5BiS2−xSex (x = 0.22 and 0.69). The superconducting states are not completely suppressed by the applied magnetic fields with strengths up to 55 T. Thus, we consider that the in-plane upper critical field is enhanced by the local inversion symmetry breaking and its layered structure. Our study will open a new pathway for the discovery of superconductors that exhibit a high upper critical field by focusing on the local inversion symmetry breaking.

Magnetic and transport properties of electronically spin polarised double perovskites and Heusler intermetallics

<p>Half-metallic ferromagnets with 100 % electronic spin polarisation are an interesting class of materials for new spin transport electronics applications. Some of the double perovskites and Heusler alloys are predicted to be half-metallic with Curie temperatures above room temperature. This thesis presents the results from an experimental study of polycrystalline double perovskites Sr₂₋ₓLaₓFeMoO₆ and Ba₂₋ₓLaₓFeMoO₆, and ordered and disordered epitaxial thin films of Co₂MnSi Heusler alloys. A magnetothermopower was observed in Sr₂₋ₓLaₓFeMoO₆ and Ba₂₋ₓLaₓFeMoO₆. This magnetothermopower can be explained in terms of a spin-tunnelling contribution to the thermopower between grains that changes in an applied magnetic field. The results from the high temperature (above 400 K) magnetisation studies on Ba₂₋ₓLaₓFeMoO₆ in the paramagnetic region reveal that a localised electron model with antiferromagnetic coupling to itinerant electrons can account for the carrier concentration dependent effective moments. The correlation between the bare itinerant electron susceptibility and the Curie-Weiss temperature supports the kinetic energy driven model that has been used to account for the electronic spin polarisation and high Curie temperatures. Antisite disorder is evident in the Co₂MnSi thin films that leads to a reduction in the saturation magnetisation. The resistivity of the ordered Co₂MnSi thin film is linear in temperature whereas the resistivity of the disordered film increases at low temperature due to weak localisation. A magnetoresistance is observed in ordered and disordered films. At low fields (below 0.1 T) the magnetoresistance is likely to be due to domain wall scattering. For magnetic fields greater than 0.1 T there is likely to be a contribution from a magnetic-field-induced suppression of the weak localisation resistivity. Similar magnetoresistance behaviour was observed for ordered and disordered films. There is a large anomalous Hall resistivity observed in the ordered and disordered Co₂MnSi thin films. In the case of the ordered film it is found that the anomalous Hall effect is dominated by skew scattering.</p>

Magnetic and transport properties of electronically spin polarised double perovskites and Heusler intermetallics

<p>Half-metallic ferromagnets with 100 % electronic spin polarisation are an interesting class of materials for new spin transport electronics applications. Some of the double perovskites and Heusler alloys are predicted to be half-metallic with Curie temperatures above room temperature. This thesis presents the results from an experimental study of polycrystalline double perovskites Sr₂₋ₓLaₓFeMoO₆ and Ba₂₋ₓLaₓFeMoO₆, and ordered and disordered epitaxial thin films of Co₂MnSi Heusler alloys. A magnetothermopower was observed in Sr₂₋ₓLaₓFeMoO₆ and Ba₂₋ₓLaₓFeMoO₆. This magnetothermopower can be explained in terms of a spin-tunnelling contribution to the thermopower between grains that changes in an applied magnetic field. The results from the high temperature (above 400 K) magnetisation studies on Ba₂₋ₓLaₓFeMoO₆ in the paramagnetic region reveal that a localised electron model with antiferromagnetic coupling to itinerant electrons can account for the carrier concentration dependent effective moments. The correlation between the bare itinerant electron susceptibility and the Curie-Weiss temperature supports the kinetic energy driven model that has been used to account for the electronic spin polarisation and high Curie temperatures. Antisite disorder is evident in the Co₂MnSi thin films that leads to a reduction in the saturation magnetisation. The resistivity of the ordered Co₂MnSi thin film is linear in temperature whereas the resistivity of the disordered film increases at low temperature due to weak localisation. A magnetoresistance is observed in ordered and disordered films. At low fields (below 0.1 T) the magnetoresistance is likely to be due to domain wall scattering. For magnetic fields greater than 0.1 T there is likely to be a contribution from a magnetic-field-induced suppression of the weak localisation resistivity. Similar magnetoresistance behaviour was observed for ordered and disordered films. There is a large anomalous Hall resistivity observed in the ordered and disordered Co₂MnSi thin films. In the case of the ordered film it is found that the anomalous Hall effect is dominated by skew scattering.</p>

Characterization of Electronic Properties, Exchange Splitting and Ferromagnetic Arrangement in New Ti-Doped BaO

We have studied the electronic structures, ferromagnetic properties, half-metallicity and exchange splitting in BaO doped with titanium such as Ba1-xTixO at concentration x = 0.125. The structural parameters of BaO and Ba0.875Ti0.125O compounds are calculated with generalised gradient approximation of Wu and Cohen, while their electronic structures, accurate band gaps and magnetic properties are evaluated by the use of the Tran-Blaha-modified Becke-Johnson potential. The changes of lattice parameter and bulk modulus of Ba0.875Ti0.125O are discussed with respect to the BaO. We have found that the Ba0.875Ti0.125O has a wide half-metallic ferromagnetic gap of 2.701 eV and a half-metallic gap of 0.803 eV with integral Bohr magneton of 2 μB, where its ferromagnetic state is characterised by the main contribution of the direct exchange splitting. Therefore, the Ba0.875Ti0.125O is true half-metallic ferromagnet with spin polarisation of 100 % and appears to be promising material for spintronics applications.

On Symmetry Properties of The Corrugated Graphene System

The properties of the ballistic electron transport through a corrugated graphene system are analysed from the symmetry point of view. The corrugated system is modelled by a curved surface (an arc of a circle) connected from both sides to flat sheets. The spin–orbit couplings, induced by the curvature, give rise to equivalence between the transmission (reflection) probabilities of the transmitted (reflected) electrons with the opposite spin polarisation, incoming from opposite system sides. We find two integrals of motion that explain the chiral electron transport in the considered system.

Photoexcited triplet states of twisted acenes investigated by Electron Paramagnetic Resonance

Increased twisting of the anthracene core affects the ISC efficiency and induces changes in zero-field splitting parameters, spin polarisation and hyperfine couplings.