A two-dimensional analytical subthreshold behavior models for short-channel AlGaAs/GaAs HFETs

2004 ◽  
Author(s):  
T.K. Chiang ◽  
Hsiu-Hung Su ◽  
J.M. Lin
Keyword(s):  
Two Dimensional ◽  
Short Channel ◽  
Behavior Models

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

1999 ◽  
Vol 568 ◽  
Author(s):  
M.E. Rubin ◽  
S. Saha ◽  
J. Lutze ◽  
F. Nouri ◽  
G. Scott ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Recombination Rate ◽  
Gate Oxide ◽  
Two Dimensional ◽  
Short Channel ◽  
Short Channel Effect ◽  
Mos Capacitor ◽  
Enhanced Diffusion ◽  
Channel Effect ◽  
Additional Nitrogen

ABSTRACTExperiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.

Short Channel MOS-IC Based on Accurate Two Dimensional Device Design

1976 ◽  
Vol 15 (S1) ◽  
pp. 193 ◽  
Author(s):  
Ryoichi Hori ◽  
Hiroo Masuda ◽  
Osamu Minato ◽  
Shigeru Nishimatsu ◽  
Kikuji Sato ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Device Design ◽  
Short Channel
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