High performance radiation hardened register cell design on standard CMOS process

2004 ◽  
Author(s):  
Weizhong Wang
Keyword(s):  
High Performance ◽  
Cmos Process ◽  
Cell Design ◽  
Standard Cmos Process ◽  
Radiation Hardened

High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology

2003 ◽  
Vol 47 (7) ◽  
pp. 1173-1177 ◽  
Author(s):  
N Collaert ◽  
P Verheyen ◽  
K De Meyer ◽  
R Loo ◽  
M Caymax
Keyword(s):  
High Performance ◽  
Cmos Process ◽  
Process Technology ◽  
Standard Cmos Process

Novel Chain Stack Capacitor for 32Mb FeRAM and Beyond

2002 ◽  
Vol 748 ◽  
Author(s):  
R. Bruchhaus ◽  
T. Ozaki ◽  
U. Ellerkmann ◽  
J. Lian ◽  
Y. Kumura ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Fatigue Behavior ◽  
Ferroelectric Material ◽  
Small Cell ◽  
High Density ◽  
Cmos Process ◽  
Cell Design ◽  
Ferroelectric Capacitor ◽  
Standard Cmos Process ◽  
Sputter Deposited

ABSTRACTFor high density FeRAM devices small cell sizes are essential. The combination of the capacitor on plug (COP) structure with the Chain FeRAM™ cell design is used to develop a 32Mb FeRAM. Based on a 0.2 μm standard CMOS process a silicide capped polysilicon plug is used to contact the bottom electrode of the ferroelectric capacitor to the transistor. The barrier contact to the plug is formed by IrO2/Ir and a sputter deposited PZT (40/60) is used as ferroelectric material. The function of SrRuO3 (SRO) layers at the electrode/PZT interfaces is described in more detail. Double sided SRO results in slightly lower coercive voltage and imprint behavior compared to capacitors without SRO. Double sided SRO is essential to achieve excellent fatigue behavior measured up to 1×1011 switching cycles.

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hole Mobility ◽  
Micro Electro Mechanical System ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Ir Sensor ◽  
Cantilever Structure ◽  
Cmos Mems ◽  
On Chip ◽  
Micro Cantilever

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

scholarly journals A Novel Fast-Locking ADPLL Based on Bisection Method

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1382
Author(s):  
Xiaoying Deng ◽  
Huazhang Li ◽  
Mingcheng Zhu
Keyword(s):  
High Performance ◽  
Tuning Range ◽  
Frequency Control ◽  
Control Word ◽  
Cmos Process ◽  
Bisection Method ◽  
Reference Frequency ◽  
Wide Tuning Range ◽  
Cascade Structure ◽  
And Control

Based on the idea of bisection method, a new structure of All-Digital Phased-Locked Loop (ADPLL) with fast-locking is proposed. The structure and locking method are different from the traditional ADPLLs. The Control Circuit consists of frequency compare module, mode-adjust module and control module, which is responsible for adjusting the frequency control word of digital-controlled-oscillator (DCO) by Bisection method according to the result of the frequency compare between reference clock and restructure clock. With a high frequency cascade structure, the DCO achieves wide tuning range and high resolution. The proposed ADPLL was designed in SMIC 180 nm CMOS process. The measured results show a lock range of 640-to-1920 MHz with a 40 MHz reference frequency. The ADPLL core occupies 0.04 mm2, and the power consumption is 29.48 mW, with a 1.8 V supply. The longest locking time is 23 reference cycles, 575 ns, at 1.92 GHz. When the ADPLL operates at 1.28 GHz–1.6 GHz, the locking time is the shortest, only 9 reference cycles, 225 ns. Compared with the recent high-performance ADPLLs, our design shows advantages of small area, short locking time, and wide tuning range.

scholarly journals Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1572
Author(s):  
Ehab A. Hamed ◽  
Inhee Lee
Keyword(s):  
Soft Error ◽  
Error Tolerance ◽  
Cmos Process ◽  
Flip Flop ◽  
Single Event Upsets ◽  
Area Overhead ◽  
Fair Comparison ◽  
Reference Design ◽  
Radiation Hardened ◽  
Radiation Hardened By Design

In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.

Sign in / Sign up

Export Citation Format

Share Document