Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed MOCVD process show comparable or better properties compared to the standard atomic layer deposition process.
In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process