scholarly journals Quantitative low-voltage spherical and chromatic aberration-corrected high-resolution TEM analysis of beam-specimen interactions in single-layer MoS2 and MoS2/graphene heterostructures

Author(s):  
Tibor Lehnert ◽  
Johannes Biskupek ◽  
Janis Köster ◽  
Martin Linck ◽  
Ute Kaiser
2014 ◽  
Vol 70 (a1) ◽  
pp. C21-C21
Author(s):  
Ute Kaiser

We report on structural and electronic properties of two-dimensional materials ob-tained by analytical low-voltage aberration-corrected transmission electron microscopy. Basic crystallographic defects and their peculiarities will be discussed for two-dimensional materials at the atomic level. Thus, we report the atomic structure of point defect and -clusters [1], the full life circle of dislocations [2] and the movements of grain boundaries in grapheme [3]. In addition, we unravel the atomic structure of the amorphous phase (graphene, SiO2) in direct space just from single-atom-based analysis of high-resolution TEM images [5, 6]. As the energetic electron beam is interacting with the specimen via transferring energy to the atoms, structural transformation between different phases can be followed atom-by-atom [7, 8, 9]. In addition, physical properties such as the knock-on damage threshold is determined from controlled direct space experiments and precise measurements of high-resolution TEM images of graphene and MoS2[8, 7]. However beam-electron interactions with the specimen are also restricting imaging the pristine structure of a sample. It can be suppressed by simply limiting the total electron doses on the samples. Limited electron doses, however, result in worse signal to noise ratios. Here, a quantitative approach for estimating the visibility of objects in TEM images with limited doses will be presented [10]. Another traditional approach to suppress electron-induced damage during HRTEM observation is to employ an efficient cleaning procedure [11] and the protective coating of sensitive materials. This old approach will be taken to its extreme, when radiation sensitive materials are enclosed inside carbon nanotubes [12] and between two graphene layers [13]. We show moreover the advantage of lowering the accelerating voltage for imaging the pristine structure of low-dimensional materials [14]. [4] P. Wachsmuth, R. Hambach, M.K. Kinyanjui, et al., Phys. Rev. B B 88, 075433, (2013) [5] P. Y. Huang, S. Kurasch, A. Srivastava, et al. Nano Lett. 12(2), 1081, (2012) [6] P. Y. Huang, S. Kurasch, J.S. Alden, et al., Science 342, 224, (2013) [7] H.-P. Komsa, J. Kotakoski, S. Kurasch, et al., Phys. Rev. Lett. 109, 035503 (2012) [8] C Meyer, F Eder, S Kurasch, et al. Physical Review Letters, 108, 196102. 2012. [9] B. Westenfelder, J. C. Meyer, J. Biskupek, et al., Transformations of Carbon Adsorbates on Graphene Substrates under Extreme Heat, Nano Letters, 11 (12), 5123-5127, 2011 [10] Z. Lee, H. Rose, O. Lehtinen, et al., Ultramicroscopy (2014), DOI 10.1016/j.ultramic.2014.01.010 [11] G. Algara-Siller, S. Kurasch, M. Sedighi, et al., Appl. Phys. Lett. 103 (2013) 203107 [12] T. Zoberbier, T. W. Chamberlain, J. Biskupek, et al., J. Am. Chem. Soc. 134 (2012) 3073-3079 [13] G. Algara-Siller, S. Kurasch, M. Sedighi, et al., Appl. Phys. Lett. 103. 203107, (2013) [14] U. Kaiser et al. Ultramicroscopy, 111, 8, 1239, (2011) [15] Fruitful cooperation within the SALVE project and financial support by the DFG (German Research Foundation) and by the Ministry of Science, Research, and the Arts (MWK) of Baden-Württemberg are gratefully acknowledged.


2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


2013 ◽  
Vol 19 (S2) ◽  
pp. 1556-1557 ◽  
Author(s):  
B. Zhang ◽  
W. Zhang ◽  
L. Shao ◽  
D.S. Su

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


Author(s):  
M. Haider ◽  
P. Hartel ◽  
H. Müller ◽  
S. Uhlemann ◽  
J. Zach

The achievable resolution of a modern transmission electron microscope (TEM) is mainly limited by the inherent aberrations of the objective lens. Hence, one major goal over the past decade has been the development of aberration correctors to compensate the spherical aberration. Such a correction system is now available and it is possible to improve the resolution with this corrector. When high resolution in a TEM is required, one important parameter, the field of view, also has to be considered. In addition, especially for the large cameras now available, the compensation of off-axial aberrations is also an important task. A correction system to compensate the spherical aberration and the off-axial coma is under development. The next step to follow towards ultra-high resolution will be a correction system to compensate the chromatic aberration. With such a correction system, a new area will be opened for applications for which the chromatic aberration defines the achievable resolution, even if the spherical aberration is corrected. This is the case, for example, for low-voltage electron microscopy (EM) for the investigation of beam-sensitive materials, for dynamic EM or for in-situ EM.


2005 ◽  
Vol 892 ◽  
Author(s):  
Jie Bai ◽  
J. Bai ◽  
V.L. Tassev ◽  
M. Lal Nakarmi ◽  
W. Sun ◽  
...  

AbstractThe evolution of stress during the MOCVD growth of AlN thin films on sapphire substrates under both low and high temperature conditions has been evaluated. The final stress state of the films is assumed to consist of the summation of stresses from three different sources: (1) the stress which arises from residual lattice mismatch between film and substrate i.e. that which persists after partial relaxation by misfit dislocation formation. The extent of relaxation is determined from High Resolution TEM analysis of the substrate/film interface; (2) the stress arising from the coalescence of the 3D islands nucleated in this high mismatch epitaxy process. This requires knowledge of the island sizes just prior to coalescence and this was provided by AFM studies of samples grown under the conditions of interest; and (3) the stress generated during post-growth cooling which arises from the differences in thermal expansion coefficient between AlN and sapphire. The final resultant stress, comprising the summation of stresses arising from these three sources, is found to be tensile in the sample grown at lower temperature and compressive in the sample grown at higher temperature. These results are in general qualitative agreement with results of TEM and High resolution X-ray diffraction (HRXRD) studies, which show evidence for tensile and compressive stresses in the low temperature and high temperature cases, respectively.


1984 ◽  
Vol 37 ◽  
Author(s):  
B. C. De Cooman ◽  
C. B. Carter ◽  
G. W. Wicks ◽  
T. Tanoue

Cross-sectional TEM of GaSb/InAs superlattices grown by MBE on (100) GaAs and (100) GaSb substrates shows an unusual defect structure within the strained layers. Dislocations are present within the layers and at the interface. High-resolution TEM analysis of the structure of the InAs layers suggests that these layers grow by an island mechanism. A crystal structure different from the zinc blende, is found to be present within the GaSb layers.


2001 ◽  
Vol 7 (S2) ◽  
pp. 114-115
Author(s):  
Linn W. Hobbs ◽  
A.E. Porter ◽  
V.I. Benezra ◽  
G.W. Blunn ◽  
M.J. Coathup ◽  
...  

The need to optimize adhesion between the femoral stem and surrounding tissue has led to the development of plasma-sprayed HA (PSHA) coatings as attachment facilitators for hip prostheses. The mechanisms underlying this facilitation are incompletely understood, and the long-term efficacy of HA coatings in maintaining bonding to bone remains largely unexplored. in this study, two in vivo models—canine and human—were employed for study by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) to elucidate the sequence of early bone mineralization and the longer term fate of HA coatings. High-resolution SEM and TEM of whole bone and anorganic bone were employed to establish the structure of mature bone for comparison.Whole and Anorganic Bone.Anorganic bone derived from bovine trabecular bone was examined in low-voltage field-emission SEM(LV-FESEM) and high-resolution TEM to establish the morphology of the mineral component of bone [1,2]. Trabeculae were seen to comprise oriented fiber bundles (Fig. 1), each fiber comprising an array of oriented apatite platelets (Fig. 2) arranged like a sheared stack of dominoes with approximately the 64-nm stagger of collagen hole zones.


Author(s):  
Takashi Nagatani ◽  
Mitsugu Sato ◽  
Masako OSUMI

An “in-lens” type FESEM, Hitachi S-900, developed as an ultra high resolution SEM having 0.7nm resolution at 30kV(Nagatani et al 1986), was modified for better performance at low beam energy(about 5kV or below) with small aberrations of ths objective lens and dual specimen position design. This is in responce to the recent upsurge of interest in using the LVSEM, which enables us hopefully to observe the surface topography of uncoated samples directly with maximum fidelity(Pawley 1987).The actual visibility of the minute topographical details depends upon not anly the spot size of the scanning beam but also physics of interaction between impinging electrons and solid sample(Joy 1989). However, the resolution can never be better than the spot size. Then, it would seem logical to specify the spot size first when designing a high resolution SEM. As discussed earlier(Crewe 1985; Nagatani et al 1987), the spot size of the beam is mainly limited by spherical aberration of the objective lens and diffraction at high voltage(about 10 kV and above). On the other hand, chromatic aberration and diffraction are the dominant factors at low voltages(about 5kV or below). Source size of a cold field emission is so small that we could neglect it for simplicity.In general, chromatic aberration can be smaller at higher excitation of a narrow gap objective pole-piece, which also made the working distance short. Therefore, some compromise is necessary among minimized aberrations, required specimen size, stage traverse and tilting angle etc. In practice, tolerable distortion of the image at low magnification and collection efficiency of the secondary electrons are another factors to be considered in designing the instrument. By taking these factors in simulation, an optimized objective lens was designed as shown in Table 1.


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