Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

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Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

RSC Advances ◽

10.1039/d0ra06541b ◽

2020 ◽

Vol 10 (66) ◽

pp. 40467-40479

Author(s):

R. Kara ◽

L. Mentar ◽

A. Azizi

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Zno Thin Films ◽

Synthesis And Characterization ◽

Deposition Method ◽

Glass Substrates ◽

Electrochemical Deposition Method ◽

Doped Zno ◽

Mg Doped

Mg-doped ZnO (MZO) thin films were successfully fabricated on fluorine-doped tin-oxide (FTO)-coated glass substrates by an electrochemical deposition method using aqueous electrolytes of 80 mM Zn(NO3)2 with different concentrations of Mg(NO3)2.

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Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

IRA-International Journal of Applied Sciences (ISSN 2455-4499) ◽

10.21013/jas.v4.n1.p10 ◽

2016 ◽

Vol 4 (1) ◽

Author(s):

R. Radha ◽

A. Sakthivelu ◽

D. Pradhabhan

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Dopant Concentration ◽

Blue Shift ◽

Zno Thin Films ◽

Zno Films ◽

Deposition Method ◽

X Ray Diffraction ◽

Mo Doping ◽

Doped Zno

<em>Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration. </em>

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Ultra-Violet Photoresponse Characteristics of Nanostructured Al Doped Zinc Oxide Thin Films Based Ultra-Violet Sensor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.569 ◽

2013 ◽

Vol 667 ◽

pp. 569-572

Author(s):

S.Z. Muhamed ◽

Mohamad Hafiz Mamat ◽

N.D. Md Sin ◽

Mohamad Rusop

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Ultra Violet ◽

Zno Thin Films ◽

Zno Thin Film ◽

Glass Substrates ◽

Measurement Results ◽

Doped Zno ◽

Photocurrent Measurement ◽

Uv Sensors

Nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films based ultra-violet (UV) sensors were prepared on glass substrates using immersion technique at different immersion times. Surface morphology results as characterized by scanning electron microscope (SEM) show that all prepared nanostructured Al doped ZnO were in form of nanorod structures with the typical diameter in the range of 60-250nm and the length within several micrometers. Photocurrent measurement results of the fabricated UV photoconductive sensor from nanostructured Al doped ZnO thin film immersed at 1 hr gives the highest photocurrent intensity compared with other samples.

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Influence of Various Target to Substrate Distances on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.317.471 ◽

2021 ◽

Vol 317 ◽

pp. 471-476

Author(s):

Nur Amaliyana Raship ◽

Siti Nooraya Mohd Tawil ◽

Nafarizal Nayan ◽

Khadijah Ismail ◽

Muliana Tahan ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Ultra Violet ◽

Energy Dispersive ◽

Surface Topology ◽

Zno Thin Films ◽

Zno Films ◽

X Ray ◽

Substrate Distance ◽

Doped Zno

The effect of various target to substrate distance on the physical properties of sputtered Gd-doped ZnO thin films were investigated. The thin films with three distances between a target to substrate ranged from 12.0, 13.5 and 15.0 cm were deposited by a dual-target sputtering method. All the thin film properties were characterized using x-ray diffraction, atomic force microscope, energy dispersive x-ray analysis and ultra-violet visible spectrophotometer. The sharp and intense peak of (002) was observed for a sample with the target to substrate distance of 13.5 cm which indicated good crystallinity as compared to other samples. Gd incorporations of 3 at% in ZnO films were further confirmed via the energy dispersive x-ray analysis. AFM images revealed that the surface topology Gd-doped ZnO thin film have a smooth and uniform surface. The transmittance was above 90 % and slightly decrease with the increase of target to substrate distance. The bandgap value was static at 3.14 eV for all the 12.0, 13.5 and 15.0 cm of various target to substrate distances.

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Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Journal of Materials Chemistry C ◽

10.1039/c7tc04003b ◽

2018 ◽

Vol 6 (3) ◽

pp. 588-597 ◽

Cited By ~ 38

Author(s):

Dominic B. Potter ◽

Michael J. Powell ◽

Ivan P. Parkin ◽

Claire J. Carmalt

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Thin Films ◽

Glass Substrates ◽

Doped Zno ◽

Indium Gallium ◽

Co Doped

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

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Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽

10.3390/cryst10040252 ◽

2020 ◽

Vol 10 (4) ◽

pp. 252 ◽

Cited By ~ 5

Author(s):

A. M. Alsaad ◽

A. A. Ahmad ◽

I. A. Qattan ◽

Qais M. Al-Bataineh ◽

Zaid Albataineh

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Optical Properties ◽

Nonlinear Optical ◽

Zno Thin Films ◽

Zno Films ◽

Optical Parameters ◽

Group Iii ◽

Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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Magnetic and Raman scattering studies of Co-doped ZnO thin films grown by pulsed laser deposition

Applied Physics A ◽

10.1007/s00339-013-7875-0 ◽

2013 ◽

Vol 115 (3) ◽

pp. 843-849 ◽

Cited By ~ 7

Author(s):

Arun Aravind ◽

K. Hasna ◽

M. K. Jayaraj ◽

Mukesh Kumar ◽

Ramesh Chandra

Keyword(s):

Thin Films ◽

Raman Scattering ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Doped Zno ◽

Co Doped

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Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.685.3 ◽

2014 ◽

Vol 685 ◽

pp. 3-6

Author(s):

Ying Lian Wang ◽

Jun Yao Ye

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Sol Gel ◽

Structural Features ◽

Photocatalytic Properties ◽

Zno Thin Films ◽

Molar Ratio ◽

Zno Films ◽

Doped Zno ◽

Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

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Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.568 ◽

2015 ◽

Vol 1109 ◽

pp. 568-571

Author(s):

Shafura Karim ◽

Uzer Mohd Noor ◽

M.H. Mamat ◽

Shuhaimi Abu Bakar ◽

Salman A.H. Alrokayan ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Zinc Oxide ◽

Glass Substrate ◽

Sol Gel ◽

Zno Thin Films ◽

Immersion Method ◽

Doped Zno ◽

Scanning Electron

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).

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