Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors

2015 ◽  
Vol 25 (17) ◽  
pp. 2564-2572 ◽  
Author(s):  
Guoxia Liu ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.


2017 ◽  
Vol 29 (19) ◽  
pp. 8531-8538 ◽  
Author(s):  
Keenan N. Woods ◽  
Paul N. Plassmeyer ◽  
Deok-Hie Park ◽  
Lisa J. Enman ◽  
Aidan K. Grealish ◽  
...  

2015 ◽  
Vol 773-774 ◽  
pp. 716-719
Author(s):  
Mokhter Faezahana ◽  
Nayan Nafarizal ◽  
Jia Wei Low ◽  
Che Ani Norhidayah ◽  
Mohd Zainizan Sahdan ◽  
...  

Atomic force microscope (AFM) is a useful tool to capture the two- and three-dimensional image of height and size of nanostructured thin film. It operate by measuring the forces between a sharp tip and surface of the measured sample. In addition, AFM is equipped with powerful software for image processing to interpret experimental results in detail. For example, by using the height and scanning length parameters of measured sample, average roughness and root mean square roughness can be evaluated. In the present works, the effect of image flattening process toward the surface roughness and surface fluctuations of metal oxide thin films will be presented. Set of samples were prepared by magnetron sputtering deposition and sol-gel coating techniques. In gas sensor industries using metal oxide thin film, surface roughness of metal oxide thin films are very important in order to improve the sensitivity and respond time of gas sensor. Therefore, optimization of thin film deposition and characterization are very important. The correlation between the three-dimensional image and thin film deposition and image processing parameters will also be presented.


2017 ◽  
Vol 29 (21) ◽  
pp. 9480-9488 ◽  
Author(s):  
Elizabeth A. Cochran ◽  
Deok-Hie Park ◽  
Matthew G. Kast ◽  
Lisa J. Enman ◽  
Cory K. Perkins ◽  
...  

2018 ◽  
Vol 47 (2) ◽  
pp. 291-308 ◽  
Author(s):  
Iñigo Bretos ◽  
Ricardo Jiménez ◽  
Jesús Ricote ◽  
M. Lourdes Calzada

Low-temperature chemical solution methods to prepare crystalline metal oxide thin films and to integrate them with flexible substrates are shown.


2021 ◽  
Vol 2056 (1) ◽  
pp. 012046
Author(s):  
A Abduev ◽  
A Akhmedov ◽  
A Asvarov ◽  
V Kanevsky ◽  
A Muslimov ◽  
...  

Abstract The analysis the discharge processes in magnetron plasma, target sputtering processes, as well as nucleation and formation of oxide thin films during dc magnetron sputtering is carried out. Particular attention is paid to the phenomenon of instabilities of the current-voltage characteristics of magnetron plasma during the sputtering of oxide targets, the processes of structural transformations of the surface of metal oxide targets under ion bombardment impact, and the mechanisms of low-temperature magnetron deposition of metal oxide thin films. Based on the results of the analysis performed the optimal routes for improving technologies for the low-temperature formation of transparent conductive oxide thin films have been discussed.


Sign in / Sign up

Export Citation Format

Share Document