scholarly journals On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors

2019 ◽  
Vol 31 (37) ◽  
pp. 1902291 ◽  
Author(s):  
Alexandra F. Paterson ◽  
Hendrik Faber ◽  
Achilleas Savva ◽  
Georgios Nikiforidis ◽  
Murali Gedda ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Electrode Modification ◽  
Organic Electrochemical Transistors

scholarly journals Исследование формирования омических контактов Au/Mo/Ti с пониженным сопротивлением к эпитаксиальным слоям алмаза p-типа

2019 ◽  
Vol 89 (12) ◽  
pp. 1923
Author(s):  
М.Н. Дроздов ◽  
Е.В. Демидов ◽  
Ю.Н. Дроздов ◽  
С.А. Краев ◽  
В.И. Шашкин ◽  
...  
Keyword(s):  
Titanium Carbide ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Contact Region ◽  
Effective Diffusion ◽  
Protective Properties ◽  
High Adhesion ◽  
Heavy Doping ◽  
P Type

The formation of ohmic Au/Mo/Ti contacts to epitaxial p-type diamond films is studied. The effect of annealing on the electrical and structural properties of contacts has been investigated. It was shown that during rapid thermal annealing, the outer layer of gold protects the contact system from oxidation up to a temperature of 850°C, unlike the simplified Au/Ti system, which is more common in modern works. In Au/Ti structures without a Mo layer after high-temperature annealing, effective diffusion of titanium into the gold layer occurs, which reduces its protective properties and accelerates the diffusion of oxygen to the boundary with the diamond. Oxidation of the Ti/C contact region blocks the formation of a conductive layer of titanium carbide with high adhesion at the border with diamond. The role of various factors in reducing the contact resistance is compared: annealing for the formation of titanium carbide, heavy doping of diamond with boron atoms, and crystalline perfection of epitaxial diamond substrates. For doped epitaxial films grown on single-sector quality substrates, non-annealed ohmic contacts with a record contact resistance of 4•10<-7> Ω•cm<2> were obtained.

Revealing the Role of Polaron Distribution on the Performance of n-Type Organic Electrochemical Transistors

2022 ◽  
Author(s):  
Junwei Shi ◽  
Peiyun Li ◽  
Xin-Yu Deng ◽  
Jingcao Xu ◽  
Zhen Huang ◽  
...  
Keyword(s):  
Organic Electrochemical Transistors

The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures

1999 ◽  
Vol 14 (4) ◽  
pp. 1261-1271 ◽  
Author(s):  
Nancy E. Lumpkin ◽  
Gregory R. Lumpkin ◽  
Mark G. Blackford
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Wetting Agent ◽  
Dopant Distribution ◽  
Low Resistance ◽  
Ni Content ◽  
Alloy Microstructure

Nickel is a commonly used wetting agent in alloyed Au–Ge ohmic contacts to n-GaAs, resulting in uniformity improvements to the morphology and contact resistance. In order to study the role of Ni in Ni–Ge–Au alloys, we have fabricated samples with varying Ni content and characterized them using electron microbeam techniques. Our data indicate the amount of Ni in the alloy affects the microstructure and composition, the morphology of the metal/GaAs interface, and the amount of GaAs consumed during the alloy reaction. Also, the dopant distribution into the GaAs is heterogeneous depending on the alloy microstructure.

The role of contact resistance in skin burns

1982 ◽  
Vol 4 (2) ◽  
pp. 97-102 ◽  
Author(s):  
A.P. Hatton ◽  
H. Halfdanarson
Keyword(s):  
Contact Resistance

Influence of Surface Roughness on Friction and Contact Resistance in Sliding Electrical Contacts

2007 ◽  
Author(s):  
Dinesh G. Bansal ◽  
Jeffrey L. Streator
Keyword(s):  
Surface Roughness ◽  
Contact Resistance ◽  
Coefficient Of Friction ◽  
Electrical Contact ◽  
Electrical Current ◽  
Electrical Contacts ◽  
Sliding Electrical Contacts ◽  
The Coefficient Of Friction ◽  
Current Densities

An experiment is conducted to investigate the role of surface roughness on the coefficient of friction and contact resistance of sliding electrical contacts. A hemispherical pin is sliding along both smooth and rough 2-meter rail surface. Tests are performed at both low and moderate sliding speed and for a range of electrical current densities, ranging from 0 to about 12 GA/m2. It was found that surface roughness had a significant influence on the coefficient of friction, with the smoother surfaces exhibiting higher coefficients of friction. Contact resistance, on the other hand, did not show as strong an effect of surface roughness, except for a few parameter combinations. At the higher current densities studied (>10 GA/m2), it was found that the contact resistance values tended to be on the order of 1 mΩ, independent of load, speed and roughness. This convergence may be due to presence of liquid metal film at the interface, which established ideal electrical contact.

Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kaminska ◽  
M. Guziewicz ◽  
S. Kwiatkowski ◽  
A. Turos
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Tin Films ◽  
Specific Contact ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

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