Robust Superhydrophobic Surface with Controlled Adhesion: In Situ Growth Depending on Its Bulk Phase Composition and Environment

2018 ◽  
Vol 5 (15) ◽  
pp. 1800444 ◽  
Author(s):  
Kai Chen ◽  
Junyi Hu ◽  
Caoyu Wang ◽  
Mingpeng Wu ◽  
Cong Ding ◽  
...  
2020 ◽  
Vol 44 (17) ◽  
pp. 7065-7070
Author(s):  
Wanqing Zhang ◽  
Shaohua Wei ◽  
Wenlong Tang ◽  
Kang Hua ◽  
Cheng-xing Cui ◽  
...  

A superhydrophobic HKUST-1/HDT/CF surface with excellent durability was fabricated by using an in situ growth method combined with surface HDT modification.


Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.


2003 ◽  
Vol 781 ◽  
Author(s):  
J. Gray ◽  
W. Schwarzacher ◽  
X.D. Zhu

AbstractWe studied the initial stages of the electrodeposition of Pb in the presence of chlorine ions on Cu(100), using an oblique-incidence optical reflectivity difference (OIRD) technique. The OI-RD results reveal that immediately following the underpotential deposition (UPD) of the first Pb monolayer, two different types of bulk-phase films grow depending upon the magnitude of overpotential and cyclic voltammetry (CV) scan rate. At low overpotentials and/or slow scan rates, we propose that a bulk-phase Pb film grows on top of the UPD monolayer. At high overpotentials and/or fast scan rates, either a PbO, PbCl2, or a rough Pb bulk-phase layer grows on top of the UPD layer such that the reflectivity difference signal from such a film has an opposite sign.


2021 ◽  
Vol 410 ◽  
pp. 126958
Author(s):  
Linnea Selegård ◽  
Thirza Poot ◽  
Peter Eriksson ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  

Carbon ◽  
2021 ◽  
Vol 174 ◽  
pp. 423-429
Author(s):  
Xinlu Li ◽  
Seoung-Ki Lee ◽  
Junwei Sha ◽  
Yuanyuan Deng ◽  
Yujie Zhao ◽  
...  

Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 584
Author(s):  
Rui Dang ◽  
Liqiu Ma ◽  
Shengguo Zhou ◽  
Deng Pan ◽  
Bin Xia

Ultra-high molecular weight polythene (UHMWPE), with outstanding characteristics, is widely applied in modern industry, while it is also severely limited by its inherent shortcomings, which include low hardness, poor wear resistance, and easy wear. Implementation of feasible protection on ultra-high molecular weight polythene to overcome its shortcomings would be of significance. In the present study, amorphous carbon (a-C) film was fabricated on ultra-high molecular weight polythene (UHMWPE) to provide good protection, and the relevant growth mechanism of a-C film was revealed by controlling carbon plasma currents. The results showed the in situ transition layer, in the form of chemical bonds, was formed between the UHMWPE substrate and the a-C film with the introduction of carbon plasma, which provided strong adhesion, and then the a-C film continued epitaxial growth on the in situ transition layer with the treatment of carbon plasma. This in situ growth of a-C film, including the in situ transition layer and the epitaxial growth layer, significantly improved the wetting properties, mechanical properties, and tribological properties of UHMWPE. In particular, good protection by in situ growth a-C film on UHMWPE was achieved during sliding wear.


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