Antimony‐Rich GaAs x Sb 1− x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors

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SenPo Yip ◽  
You Meng ◽  
Weijun Wang ◽  
Fei Wang ◽  
...  
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Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
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...  

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.


2016 ◽  
Vol 4 (11) ◽  
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Author(s):  
Xing Zhou ◽  
Lin Gan ◽  
Qi Zhang ◽  
Xing Xiong ◽  
Huiqiao Li ◽  
...  

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition, showing a high responsivity of 300 A W−1 and a fast decay time of 7 ms.


ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7239-7245 ◽  
Author(s):  
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Hehai Fang ◽  
Mingsheng Long ◽  
Feng Wu ◽  
Peng Wang ◽  
...  

2020 ◽  
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Hanbyeol Jang ◽  
Yongwook Seok ◽  
YiTaek Choi ◽  
Sang‐Hoo Cho ◽  
Kenji Watanabe ◽  
...  

2020 ◽  
Vol 8 (23) ◽  
pp. 7812-7819
Author(s):  
Longfei Mi ◽  
Yajing Chang ◽  
Yan Zhang ◽  
Enze Xu ◽  
Yang Jiang

A hybrid perovskite decorated with PbS-QDs by using a ligand exchange process to fabricate high-performance photodetectors.


2015 ◽  
Vol 8 (1) ◽  
pp. 29-35 ◽  
Author(s):  
Huang Tan ◽  
Chao Fan ◽  
Liang Ma ◽  
Xuehong Zhang ◽  
Peng Fan ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Ionel Stavarache ◽  
Valentin Serban Teodorescu ◽  
Petronela Prepelita ◽  
Constantin Logofatu ◽  
Magdalena Lidia Ciurea

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