High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7239-7245 ◽  
Author(s):  
Dingshan Zheng ◽  
Hehai Fang ◽  
Mingsheng Long ◽  
Feng Wu ◽  
Peng Wang ◽  
...  

2020 ◽  
Vol 8 (47) ◽  
pp. 17025-17033
Author(s):  
Heng Zhang ◽  
Wei Wang ◽  
SenPo Yip ◽  
Dapan Li ◽  
Fangzhou Li ◽  
...  

Substantial performance enhancement of near-infrared photodetectors can be achieved by utilizing two-step chemical vapor deposition-grown InGaAs nanowires as device channels.



Small ◽  
2019 ◽  
Vol 15 (9) ◽  
pp. 1805307 ◽  
Author(s):  
Zongpeng Ma ◽  
Shouning Chai ◽  
Qingliang Feng ◽  
Liang Li ◽  
Xiaobo Li ◽  
...  


2011 ◽  
Author(s):  
M. R. Pramod ◽  
M. M. Kamble ◽  
V. S. Waman ◽  
A. M. Funde ◽  
V. G. Sathe ◽  
...  


Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...



2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.



2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.



2015 ◽  
Vol 27 (48) ◽  
pp. 8119-8119 ◽  
Author(s):  
Xing Zhou ◽  
Lin Gan ◽  
Wenming Tian ◽  
Qi Zhang ◽  
Shengye Jin ◽  
...  


Sign in / Sign up

Export Citation Format

Share Document