Gate controllable resistive random access memory devices using reduced graphene oxide

2016 ◽  
Vol 108 (15) ◽  
pp. 153503 ◽  
Author(s):  
Preetam Hazra ◽  
A. N. Resmi ◽  
K. B. Jinesh
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Reduced Graphene

Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DJ08 ◽  
Author(s):  
Cheng-Li Lin ◽  
Wei-Yi Chang ◽  
Yen-Lun Huang ◽  
Pi-Chun Juan ◽  
Tse-Wen Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Capping Layer ◽  
Reduced Graphene

Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology

Nano Letters ◽  
2014 ◽  
Vol 14 (6) ◽  
pp. 3214-3219 ◽  
Author(s):  
He Tian ◽  
Hong-Yu Chen ◽  
Tian-Ling Ren ◽  
Cheng Li ◽  
Qing-Tang Xue ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Cost Effective ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Reduced Graphene ◽  
Effective Transfer

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device

2021 ◽  
pp. 2101018
Author(s):  
Jong‐Whi Park ◽  
Chang‐Jin Moon ◽  
Young‐Min Ju ◽  
Yong‐Rae Jang ◽  
Simon S. Park ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Oxide Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Annealing Process ◽  
Depth Gradient ◽  
Access Memory ◽  
Reduced Graphene

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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