Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DJ08 ◽  
Author(s):  
Cheng-Li Lin ◽  
Wei-Yi Chang ◽  
Yen-Lun Huang ◽  
Pi-Chun Juan ◽  
Tse-Wen Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Capping Layer ◽  
Reduced Graphene

Gate controllable resistive random access memory devices using reduced graphene oxide

2016 ◽  
Vol 108 (15) ◽  
pp. 153503 ◽  
Author(s):  
Preetam Hazra ◽  
A. N. Resmi ◽  
K. B. Jinesh
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Reduced Graphene

Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology

Nano Letters ◽  
2014 ◽  
Vol 14 (6) ◽  
pp. 3214-3219 ◽  
Author(s):  
He Tian ◽  
Hong-Yu Chen ◽  
Tian-Ling Ren ◽  
Cheng Li ◽  
Qing-Tang Xue ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Cost Effective ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Reduced Graphene ◽  
Effective Transfer

Resistance Switching Behavior of ZnO Resistive RAM (RRAM) with a Reduced Graphene Oxide capping layer

2014 ◽  
Author(s):  
C.L. Lin ◽  
W.Y. Chang ◽  
Y.L. Huang ◽  
T.W. Wang ◽  
K.Y. Hung
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Capping Layer ◽  
Resistive Ram ◽  
Reduced Graphene

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device

2021 ◽  
pp. 2101018
Author(s):  
Jong‐Whi Park ◽  
Chang‐Jin Moon ◽  
Young‐Min Ju ◽  
Yong‐Rae Jang ◽  
Simon S. Park ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Oxide Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Annealing Process ◽  
Depth Gradient ◽  
Access Memory ◽  
Reduced Graphene

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

scholarly journals Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment

2019 ◽  
Vol 9 (7) ◽  
pp. 1432
Author(s):  
Chih-Yi Liu ◽  
Chun-Hung Lai ◽  
Chao-Cheng Lin ◽  
Chih-Peng Yang
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Photoelectron Spectra ◽  
Switching Behavior ◽  
Schematic Model ◽  
Access Memory ◽  
Electrical Field ◽  
Pt Electrode ◽  
Cu Ions

A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment.

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

2020 ◽  
Vol 2 (10) ◽  
pp. 3160-3170
Author(s):  
Desmond J. J. Loy ◽  
Putu A. Dananjaya ◽  
Somsubhra Chakrabarti ◽  
Kuan Hong Tan ◽  
Samuel C. W. Chow ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Density Dependence ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Hopping Conduction ◽  
Access Memory ◽  
Vacancy Density

scholarly journals Surface effects of electrode-dependent switching behavior of resistive random-access memory

2016 ◽  
Vol 109 (13) ◽  
pp. 131603 ◽  
Author(s):  
Jr-Jian Ke ◽  
Tzu-Chiao Wei ◽  
Dung-Sheng Tsai ◽  
Chun-Ho Lin ◽  
Jr-Hau He
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Surface Effects ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory
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