ChemInform Abstract: CHEMICAL VAPOR DEPOSITION OF SINGLE CRYSTALLINE β-SILICON CARBIDE FILMS ON SILICON SUBSTRATE WITH SPUTTERED SILICON CARBIDE INTERMEDIATE LAYER

1981 ◽  
Vol 12 (12) ◽  
Author(s):  
S. NISHINO ◽  
Y. HAZUKI ◽  
H. MATSUNAMI ◽  
T. TANAKA
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Single Crystalline

scholarly journals Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition

Membranes ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Takayuki Nagano ◽  
Koji Sato ◽  
Koichi Kawahara
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Active Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Gas Permeation ◽  
Supply Source ◽  
Porous Support ◽  
Counter Diffusion

An amorphous silicon carbide (SiC) membrane was synthesized by counter-diffusion chemical vapor deposition (CDCVD) using silacyclobutane (SCB) at 788 K. The SiC membrane on a Ni-γ-alumina (Al2O3) α-coated Al2O3 porous support possessed a H2 permeance of 1.2 × 10−7 mol·m−2·s−1·Pa−1 and an excellent H2/CO2 selectivity of 2600 at 673 K. The intermittent action of H2 reaction gas supply and vacuum inside porous support was very effective to supply source gas inside mesoporous intermediate layer. A SiC active layer was formed inside the Ni-γ-Al2O3 intermediate layer. The thermal expansion coefficient mismatch between the SiC active layer and Ni-γ-Al2O3-coated α-Al2O3 porous support was eased by the low decomposition temperature of the SiC source and the membrane structure.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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