ChemInform Abstract: Boron Ultrashallow Junction Formation in Silicon by Low-Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient.

ChemInform ◽  
2010 ◽  
Vol 30 (44) ◽  
pp. no-no
Author(s):  
W. Lerch ◽  
M. Glueck ◽  
N. A. Stolwijk ◽  
H. Walk ◽  
M. Schaefer ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Junction Formation ◽  
Ultrashallow Junction

Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 26-30 ◽  
Author(s):  
Yun-Heub Song ◽  
Ki-Tae Park ◽  
Hiroyuki Kurino ◽  
Mitsumasa Koyanagi
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Adsorbed Layer ◽  
Junction Formation ◽  
Ultrashallow Junction

Rapid thermal annealing of Si paste film and pn-junction formation

2020 ◽  
Vol 31 (38) ◽  
pp. 385202
Author(s):  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Ting Pan ◽  
Takaya Fujisaki ◽  
Hiroshige Matsumoto ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pn Junction ◽  
Junction Formation

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Rapid thermal annealing of spin-coated phosphoric acid films for shallow junction formation

1997 ◽  
Vol 71 (3) ◽  
pp. 392-394 ◽  
Author(s):  
S. Sivoththaman ◽  
W. Laureys ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Phosphoric Acid ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Shallow Junction ◽  
Junction Formation

Junction Formation in Silicon by Rapid Thermal Annealing

1993 ◽  
Vol 300 ◽  
Author(s):  
Richard B. Fair
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Annealing Process ◽  
Dopant Activation ◽  
The Past ◽  
Silicon Devices ◽  
Transient Diffusion ◽  
Junction Formation ◽  
Ion Implanted

ABSTRACTThe feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.

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