Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient
1999 ◽
Vol 146
(7)
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pp. 2670-2678
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2000 ◽
Vol 18
(1)
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pp. 462
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Keyword(s):
Keyword(s):
2000 ◽
Vol 39
(Part 1, No. 1)
◽
pp. 26-30
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2009 ◽
Vol 48
(4)
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pp. 04C011
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2000 ◽
Vol 3
(4)
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pp. 291-296
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2004 ◽
Vol 03
(04n05)
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pp. 425-430
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1989 ◽
Vol 37-38
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pp. 823-827
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