A New Single Source Precursor Approach to Gallium and Aluminum Nitride

1995 ◽  
Vol 395 ◽  
Author(s):  
Deborah A. Neumayer ◽  
C.J. Carmalt ◽  
M.F. Arendt ◽  
J.M. White ◽  
A.H. Cowley ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Substrate Temperature ◽  
Film Growth ◽  
Single Source ◽  
Amorphous Thin Films ◽  
Single Source Precursor ◽  
Nitrogen Bonds ◽  
Gan Film

ABSTRACTSingle source precursors which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me2GaN3(1), bisdimethylamidogallium azide, (Me2N)2GaN3(2), and bisdimethylamidoaluminum azide, (Me2N)2AlN3(3) as potential precursors for A1N and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250 °C. Increasing the substrate temperature to 580 °C resulted in the deposition of epitaxial GaN films. Polycrystalline A1N films were grown with 3 at 600 °C.

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

ChemInform ◽  
2003 ◽  
Vol 34 (9) ◽  
Author(s):  
Oh-Shim Joo ◽  
Kwang-Deog Jung ◽  
Sung-Hoon Cho ◽  
Je-Hong Kyoung ◽  
Chang-Kyu Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

2002 ◽  
Vol 8 (6) ◽  
pp. 273-276 ◽  
Author(s):  
O.-S. Joo ◽  
K.-D. Jung ◽  
S.-H. Cho ◽  
J.-H. Kyoung ◽  
C.-K. Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor

2019 ◽  
Vol 43 (4) ◽  
pp. 1900-1909 ◽  
Author(s):  
Himanshi Chaurasia ◽  
Santosh K. Tripathi ◽  
Kamlesh Bilgaiyan ◽  
Akhilesh Pandey ◽  
K. Mukhopadhyay ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Inert Atmosphere ◽  
Inert Gases ◽  
Effect Of Temperature ◽  
Single Source ◽  
Nitride Powder ◽  
Single Source Precursor

The precursor hexa urea aluminate(iii) was pyrolysed at various temperature (800 °C to 1000 °C) and pressure (100 Torr to 1 Torr) under inert atmosphere to study the effect of temperature, pressure and inert gases for the conversion of precursor to AlN material/thin films.

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

1999 ◽  
Vol 595 ◽  
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

AbstractWe report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the αGaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

scholarly journals Growth kinetics of GaN thin films grown by OMVPE using single source precursors

2000 ◽  
Vol 5 (S1) ◽  
pp. 152-158
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the α-GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9154-9158 ◽  
Author(s):  
M. Lemberger ◽  
S. Thiemann ◽  
A. Baunemann ◽  
H. Parala ◽  
R.A. Fischer ◽  
...  
Keyword(s):  
Thin Films ◽  
Tantalum Nitride ◽  
Single Source ◽  
Metal Electrodes ◽  
Single Source Precursor

Laser deposition of thin films with varying substrate temperature during film growth

2002 ◽  
Vol 197-198 ◽  
pp. 348-351 ◽  
Author(s):  
W.D Song ◽  
M.H Hong ◽  
Y.F Lu ◽  
W.J Wang ◽  
S.M Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Film Growth ◽  
Laser Deposition

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

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