Preparation of p-Type ZnO Films by Doping of Be—N Bonds.

ChemInform ◽  
2003 ◽  
Vol 34 (20) ◽  
Author(s):  
Masahiro Sannmyo ◽  
Yasumasa Tomita ◽  
Kenkichiro Kobayashi
Keyword(s):  
Zno Films ◽  
P Type

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

2016 ◽  
Vol 100 ◽  
pp. 468-473 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Annealing Process ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 25 (9) ◽  
pp. 3400-3402 ◽  
Author(s):  
Wang Jing-Wei ◽  
Bian Ji-Ming ◽  
Liang Hong-Wei ◽  
Sun Jing-Chang ◽  
Zhao Jian-Ze ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Ultrasonic Spray ◽  
P Type

Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering

2017 ◽  
Vol 51 (5) ◽  
pp. 559-564 ◽  
Author(s):  
M. M. Mezdrogina ◽  
A. Ya. Vinogradov ◽  
V. S. Levitskii ◽  
E. E. Terukova ◽  
Yu. V. Kozhanova ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Zno Films ◽  
Type Conductivity ◽  
P Type

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

p-type ZnO films prepared by alternate deposition of ZnO and Mg3N2 films

2013 ◽  
Vol 74 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Kenkichiro Kobayashi ◽  
Takayori Koyama ◽  
Xinyu Zhang ◽  
Yoshiumi Kohono ◽  
Yasumasa Tomita ◽  
...  
Keyword(s):  
Zno Films ◽  
P Type

Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

2013 ◽  
Vol 113 (16) ◽  
pp. 164508 ◽  
Author(s):  
R. Macaluso ◽  
M. Mosca ◽  
C. Calì ◽  
F. Di Franco ◽  
M. Santamaria ◽  
...  
Keyword(s):  
Hall Effect ◽  
Zno Films ◽  
Type Assignment ◽  
Inp Substrate ◽  
Hall Effect Measurements ◽  
P Type

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

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