Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

ChemNanoMat ◽  
2021 ◽  
Author(s):  
Jingyuan Shan ◽  
Jingyu Sun ◽  
Zhongfan Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Sapphire Substrates

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

Characteristics of Indium Oxide Rod-Like Structures Synthesized on Sapphire Substrates

2006 ◽  
Vol 518 ◽  
pp. 143-148 ◽  
Author(s):  
Hyoun Woo Kim ◽  
Ju Hyun Myung ◽  
S.H. Shim ◽  
Woon Suk Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Section ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photoluminescence Spectra ◽  
Thermal Chemical Vapor Deposition ◽  
Sapphire Substrates ◽  
Dense Arrays ◽  
Vertically Aligned ◽  
Cubic Structure

In2O3 materials consisting of dense arrays of vertically aligned rod-like structures were deposited on sapphire substrates by thermal chemical vapor deposition (CVD) using triethylindium (TEI) and oxygen as precursors at a substrate temperature of 350 oC. The rod-like structure with a triangular cross section had a cubic structure, exhibiting preferred crystallographic orientation in the [111] direction. The photoluminescence spectra of In2O3 structures under excitation at 325 nm revealed a visible emission.

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