Nanocrystalline transparent SnO2-ZnO films fabricated at lower substrate temperature using a low-cost and simplified spray technique

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Download Full-text

XRD Investigations on Film Thickness and Substrate Temperature Effects of DC Magnetron Sputtered ZnO Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.845.241 ◽

2013 ◽

Vol 845 ◽

pp. 241-245

Author(s):

Jian Wei Hoon ◽

Kah Yoong Chan ◽

Cheng Yang Low

Keyword(s):

Film Thickness ◽

Substrate Temperature ◽

Zno Films ◽

X Ray Diffraction ◽

Glass Substrates ◽

Direct Current Plasma ◽

Crystallite Sizes ◽

Magnetron Sputter Deposition ◽

Magnetron Sputter ◽

Diffraction Patterns

In this paper, direct current plasma magnetron sputter deposition technique was employed to deposit zinc oxide (ZnO) films on glass substrates. The magnetron sputtering process parameters including film thickness and substrate temperature were investigated. The crystallite sizes of the ZnO films were extracted from the measured X-ray diffraction patterns. The correlation of the crystallite size of the ZnO films with the film thickness and the substrate temperature will be discussed in this paper.

Download Full-text

Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.06.007 ◽

2016 ◽

Vol 53 ◽

pp. 84-88 ◽

Cited By ~ 6

Author(s):

Jin Yang ◽

Jian Huang ◽

Huanhuan Ji ◽

Ke Tang ◽

Lei Zhang ◽

...

Keyword(s):

Substrate Temperature ◽

Zno Films ◽

Rf Power ◽

Doped Zno ◽

Co Doped

Download Full-text

On-Line Control of Particle Spray Jet and Residual Stresses in Plasma Sprays

Thermal Spray 2000: Proceedings from the International Thermal Spray Conference ◽

10.31399/asm.cp.itsc2000p1383 ◽

2000 ◽

Author(s):

T. Renault ◽

M. Vardelle ◽

A. Grimaud ◽

P. Fauchais ◽

H. Hoffman

Keyword(s):

Residual Stresses ◽

Substrate Temperature ◽

Particle Velocity ◽

Low Cost ◽

Substrate Surface ◽

Surface Preparation ◽

Ccd Camera ◽

Powder Injection ◽

Input Parameters ◽

On Line

Abstract The quality of plasma sprayed coatings depends strongly on substrate surface preparation, especially roughness, grit residue, and oxidation stage; particle spray jet position and size relative to the plasma jet; impacting particle distribution; particle velocity, temperature, and size prior to impact; substrate temperature; and pass thickness. A simple and low-cost spray and deposit control system developed in our laboratory allows to monitor on-line the position, shape, and centroid of the hot particle spray jet. Such a tool has proved to be very sensitive to any drift in powder injection conditions and torch input parameters. Although it gives no direct information on particle velocity and temperature, this system can be easily implemented in an industrial environment and help to maintain constant the particle parameters during spraying. A CCD camera is used in conjunction with a pyrometer making it possible to measure simultaneously substrate temperature. The system can monitor coating parameters such as deposition efficiency and residual stresses. This paper describes how the system can be used to set the tolerance range of process input parameters to obtain coating parameters within given specifications.

Download Full-text