XRD Investigations on Film Thickness and Substrate Temperature Effects of DC Magnetron Sputtered ZnO Films

2013 ◽  
Vol 845 ◽  
pp. 241-245
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Direct Current Plasma ◽  
Crystallite Sizes ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Diffraction Patterns

In this paper, direct current plasma magnetron sputter deposition technique was employed to deposit zinc oxide (ZnO) films on glass substrates. The magnetron sputtering process parameters including film thickness and substrate temperature were investigated. The crystallite sizes of the ZnO films were extracted from the measured X-ray diffraction patterns. The correlation of the crystallite size of the ZnO films with the film thickness and the substrate temperature will be discussed in this paper.

Properties of Al Films Depend on Substrate Temperature by DC Magnetron Sputter Deposition

2013 ◽  
Vol 662 ◽  
pp. 413-416
Author(s):  
Yi Shen ◽  
Ruo He Yao
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Cross Section ◽  
Sputter Deposition ◽  
Surface Profiling ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Substrate Temperatures

Al films were prepared by DC magnetron sputter deposition at different substrate temperatures. The sheet resistance of the films was measured by four point probe sheet resistance meter, and the film thickness, which was obtained by surface profiling system. The surface and cross-section morphology of the films was observed by AFM and FESEM. As a result, the resistivity of the films decreases obviously as the substrate temperature increases gradually. The higher substrate temperature is, the rougher the films surface is and the larger the grain size is.

scholarly journals Synthesis of ZnO nanowires on Ti/glass substrates by DC magnetron sputter deposition

2014 ◽  
Vol 17 (2) ◽  
pp. 47-55
Author(s):  
Cam Thi Mong Dinh ◽  
Thang Bach Phan ◽  
Hoang Thanh Nguyen
Keyword(s):  
Xrd Analysis ◽  
Sputter Deposition ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Glass Substrates ◽  
Plating Method ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

One-dimensional (1-D) zinc oxide (ZnO) nanostructures, such as ZnO nanowires and nanorods, have in recent years attracted a lot of attention due to their many unique properties and possibility that can be applied to various nanoscale functional devices. In this study, ZnO nanowires have been successfully synthesized on Ti/glass substrates by an DC magnetron sputter deposition technique. Deposition of ZnO using this technique generally leads to the formation of ZnO thin film but not of nanowire. So prior to the ZnO deposition, a Cu labyer was prepared on the Ti/glass substrate using an electroless plating method under different conditions. X-ray diffraction (XRD) analysis confirmed that the ZnO nanowires with wurtzite structures have high crystal quality and are c-axis orientated. Scanning electron microscopy (SEM) showed the diameters of nanowires normally range from 60 to 150 nm and their lengths reach 20 μm. Photoluminescence (PL) measurements were adopted to analyze the optical properties of the nanowires. The existence of an electroless Cu layer is critical for the growth of the ZnO nanowires. In addition, the effect of the Cu deposition conditions on the diameters and lengths of the ZnO nanowires is discussed in details.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Effect of Solution Concentration in the Optical and Structural Properties of ZnO Thin Films

2018 ◽  
Vol 18 ◽  
pp. 113-117 ◽  
Author(s):  
Abdelkader Hafdallah ◽  
Aimane Guedri ◽  
Mohamed Salah Aida ◽  
Nadhir Attaf
Keyword(s):  
Thin Films ◽  
Solution Concentration ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Optical Band Gaps ◽  
Optical Films ◽  
Spray Technique ◽  
Uv Visible

In the present work we prepared conducting and transparent thin films ZnO with different solution concentrations by pyrolysis spray technique on glass substrates. These films are obtained starting from solution of zinc acetate dehydrate [Zn(CH3COO)2.2H2O] dissolved in methanol, at substrate temperature fixed T =350°C with a concentration of solution vary from 0.05-0.2 M. Our interest is on the investigation of solution concentration on the structural and optical properties of these films. The X-ray diffraction (XRD) results showed that the synthesized ZnO films are polycrystalline with preferred orientation along the (002) plane. The optical films characterization was carried out by the UV-Visible transmission. The optical gap and films disorder were deduced from the absorption spectra, The values of optical band gaps vary between 3.24 and 3.43 eV.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Optically Transparent of N-ZnO/p-NiO Heterojunction for Ultraviolet Photodetector Application

2011 ◽  
Vol 687 ◽  
pp. 711-715 ◽  
Author(s):  
Shu Yi Tsai ◽  
Min Hsiung Hon ◽  
Yang Ming Lu
Keyword(s):  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Order Of Magnitude ◽  
Uv Visible ◽  
Diode Behavior ◽  
P Type

Transparent p–n heterojunction diodes consisting of n-type ZnO and p-type NiO thin films were prepared on glass substrates by r.f. magnetron sputtering. The structural and optical properties of the n-ZnO/p-NiO heterojunction were characterized by X-ray diffraction (XRD), UV–visible spectroscopy, Hall measurement, and I-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 2) orientation. The optical transmittances of ZnO and NiO films are 87% and 80%, respectively. The current–voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest of leakage current is 7.73x10−8 A/cm2 for n-ZnO/p-NiO heterojunction diode. Upon UV irradiation, it was found that the detector current was increased by more than one order of magnitude. It was also found that the corresponding time constant for turn-on transient was τon = 27.9 ms while that for turn-off transient was τoff= 62.8 ms.

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

Development of ZnO/Ta2O5 heterojunction using low-temperature technological processes

2011 ◽  
Vol 1287 ◽  
Author(s):  
R. Baca ◽  
J. A. Andraca ◽  
M. G. Arellano ◽  
G. R. Paredes ◽  
R. P. Sierra
Keyword(s):  
Low Temperature ◽  
Transient Response ◽  
Rectangular Pulse ◽  
Voltage Source ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Air Atmosphere ◽  
Current Voltage ◽  
Potential Alternative

ABSTRACTZnO/Ta2O5 heterojunctions were formed on glass substrates using low temperature processes. Formerly insulating Ta2O5 films were deposited on glass substrates by vacuum evaporation using Ta2O5 powder, Afterwards transparent and conductive ZnO films were formed on the Ta2O5 films by thermal oxidation at 3200C in air atmosphere of zinc (Zn) films deposited by dc sputtering process. Structural and optical properties of ZnO were investigated by X-ray diffraction (XRD) and photoluminescence (PL). The Ta2O5 insulating films were characterized by Raman scattering. The ZnO/Ta2O5 heterojunction was characterized by current-voltage measurements at room temperature as well as transient response under a rectangular-pulse voltage source. The electrical and the transient response suggest that the ZnO/Ta2O5 heterojunction is a potential alternative for the fabrication of alternating-current-driven thin film electroluminescent (ACTFEL) devices.

Beryllium-Based Multilayer Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Normal Incidence ◽  
Sputter Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.

scholarly journals Effect of Aqueous Solution Molarity on the Structural and Electrical Properties of Spray Pyrolysed Lead Sulfide (PbS) Thin Films

2015 ◽  
Vol 57 ◽  
pp. 122-125 ◽  
Author(s):  
Mohammad Ghaffar Faraj
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Lead Sulfide ◽  
Chemical Spray Pyrolysis ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Scherrer Formula

Lead sulfide (PbS) thin films of different molarities (0.05 M, 0.075 M and 0.1 M) were prepared on glass substrates at 325 °C by chemical spray pyrolysis (CSP) technique. X-ray diffraction patterns confirm the proper phase formation of the PbS. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure with preferential reflection of (200) plane. The crystallite grain size was calculated using Scherrer formula and it is found that the 0.1M has maximum crystallite grain size (37.4 nm). Depending on the molarity, Hall measurement showed that the electrical resistivity and mobility at room temperature varied in the range 6.3x103Ω.cm to 2.1x103Ω.cm and 4.79cm2/V.S to 24.3 cm2/V.S.

Sign in / Sign up

Export Citation Format

Share Document