Synthesis of Al2O3–SiO2 Films by Ar/O2 Plasma-Enhanced CVD from Alkoxide Precursors

In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

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(Me5C5)SiH3 and (Me5C5)2SiH2 as precursors for low-temperature remote plasma-enhanced CVD of thin Si3N4 and SiO2 films

Advanced Materials ◽

10.1002/adma.19930050510 ◽

1993 ◽

Vol 5 (5) ◽

pp. 377-380 ◽

Cited By ~ 9

Author(s):

J�rgen Dahlhaus ◽

Peter Jutzi ◽

Hubert-Joachim Frenck ◽

Wilhelm Kulisch

Keyword(s):

Low Temperature ◽

Remote Plasma ◽

Sio2 Films ◽

Plasma Enhanced Cvd

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Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

MRS Proceedings ◽

10.1557/proc-772-m7.4 ◽

2003 ◽

Vol 772 ◽

Author(s):

Masakazu Muroyama ◽

Kazuto Kimura ◽

Takao Yagi ◽

Ichiro Saito

Keyword(s):

Carbon Nanotubes ◽

Carbon Nanotube ◽

Metal Catalyst ◽

Ni Catalyst ◽

Plasma Cvd ◽

Helicon Plasma ◽

Plasma Enhanced Cvd ◽

Turn On ◽

Aligned Carbon Nanotubes ◽

Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

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X-ray photoelectron spectroscopy insights on interfaces between SiO2 films and GaN substrates: differences due to depositional technique

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abab45 ◽

2020 ◽

Vol 59 (9) ◽

pp. 090902

Author(s):

Noritake Isomura ◽

Narumasa Soejima ◽

Tomohiko Mori ◽

Satoshi Ikeda ◽

Atsushi Watanabe ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Sio2 Films ◽

X Ray

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽

10.3390/coatings10070692 ◽

2020 ◽

Vol 10 (7) ◽

pp. 692

Author(s):

Jong Hyeon Won ◽

Seong Ho Han ◽

Bo Keun Park ◽

Taek-Mo Chung ◽

Jeong Hwan Han

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Carrier Concentration ◽

High Mobility ◽

Impurity Scattering ◽

Atomic Layer ◽

Growth Behavior ◽

Layer Deposition ◽

Growth Feature ◽

O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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