scholarly journals Low-Temperature Al-Al Thermocompression Bonding with Sn Oxidation Protect Layer for Wafer-Level Hermetic Sealing

2017 ◽  
Vol 100 (8) ◽  
pp. 43-50
Author(s):  
SHIRO SATOH ◽  
HIDEYUKI FUKUSHI ◽  
MASAYOSHI ESASHI ◽  
SHUJI TANAKA
Keyword(s):  
Low Temperature ◽  
Wafer Level ◽  
Hermetic Sealing ◽  
Thermocompression Bonding

Low Temperature Al-Al Thermo-compression Bonding with Sn Oxidation Protect Layer for Wafer-level Hermetic Sealing

2016 ◽  
Vol 136 (6) ◽  
pp. 237-243 ◽  
Author(s):  
Shiro Satoh ◽  
Hideyuki Fukushi ◽  
Masayoshi Esashi ◽  
Shuji Tanaka
Keyword(s):  
Low Temperature ◽  
Wafer Level ◽  
Hermetic Sealing

Characterization of Low Temperature, Wafer-Level Gold-Gold Thermocompression Bonds

1999 ◽  
Vol 605 ◽  
Author(s):  
Christine H. Tsau ◽  
Martin A. Schmidt ◽  
S. Mark Spearing
Keyword(s):  
Low Temperature ◽  
Strain Energy Release ◽  
Constant Load ◽  
Moderate Pressure ◽  
Cohesive Failure ◽  
Wafer Level ◽  
Simultaneous Application ◽  
Mems Packaging ◽  
Thermocompression Bonding ◽  
Die Bonding

AbstractLow temperature, wafer-level bonding offers several advantages in MEMS packaging, such as device protection during aggressive processing/handling and the possibility of vacuum sealing. Although thermocompression bonding can be achieved with a variety of metals, gold is often preferred because of its acceptance in die bonding [1] and its resistance to oxidation. This study demonstrates that the simultaneous application of moderate pressure (0.5 MPa) and temperature (300°C) produces strong wafer-level bonds. A four-point benddelamination technique was utilized to quantify bond toughness. Test specimens exhibited constant load versus displacement behavior during steady state crack propagation. Two distinct fracture modes were observed: cohesive failure within the Au and adhesive failure at the Ti-Si interface. The strain energy release rate for Au-Au fracture was found to be higher than that associated with Ti-Si fracture, consistent with the greater plastic deformation that occurs in the metal during fracture.

Low-temperature Cu-Cu thermocompression bonding for encapsulation of a MEMS mirror

2019 ◽  
Vol 2019 (NOR) ◽  
pp. 000012-000016
Author(s):  
Henri Ailas ◽  
Jaakko Saarilahti ◽  
Tuomas Pensala ◽  
Jyrki Kiihamäki
Keyword(s):  
Low Temperature ◽  
Bond Strength ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Ex Situ ◽  
High Yield ◽  
Maximum Temperature ◽  
Wafer Level ◽  
Cu Films ◽  
Thermocompression Bonding

Abstract In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.

Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers

2006 ◽  
Vol 326-328 ◽  
pp. 617-620
Author(s):  
Gil Soo Park ◽  
Ji Hyuk Yu ◽  
Sang Won Seo ◽  
Woo Beom Choi ◽  
Kyeong Kap Paek ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Rf Mems ◽  
Gold Films ◽  
Mems Devices ◽  
Wafer Level ◽  
Promising Technique ◽  
Hermetic Packaging ◽  
Thermocompression Bonding ◽  
Via Hole

Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320 at a pressure of 2.5. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9.

Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

2006 ◽  
Vol 326-328 ◽  
pp. 609-612
Author(s):  
Qian Wang ◽  
Sung Hoon Choa ◽  
Woon Bae Kim ◽  
Jun Sik Hwang ◽  
Suk Jin Ham ◽  
...  
Keyword(s):  
Shear Strength ◽  
Low Temperature ◽  
Insertion Loss ◽  
Rf Mems ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Wafer Level Packaging ◽  
Hermetic Sealing ◽  
Multilayer Metallization

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

Hermetic Seal Bonding at Low-temperature with Sub-micron Gold Particles for Wafer Level Packaging

2015 ◽  
Vol 2015 (1) ◽  
pp. 000073-000078 ◽  
Author(s):  
Toshinori Ogashiwa ◽  
Kentaro Totsu ◽  
Mitsutomo Nishizawa ◽  
Hiroyuki Ishida ◽  
Yuya Sasaki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Leak Rate ◽  
Surface Irregularity ◽  
Wafer Level ◽  
Gold Particles ◽  
Wafer Level Packaging ◽  
Hermetic Sealing ◽  
Hermetic Seal ◽  
Micron Size ◽  
Surface Flatness

Au/Au hermetic sealing was successfully done using a rim structure covered with sub-micron-size Au particles by low-temperature thermo-compression bonding. The easy deformability of sintered Au particles is advantageous in terms of the compliance with surface irregularity as well as the insensitivity of surface flatness. From the deflection of Si diaphragms over the sealed cavity, an inside pressure of 100 Pa and the maximum leak rate in a range of 10−14 Pa·m3/s (He) were estimated, which is sufficient for many MEMS applications.

Role of Thin Sn Layer for Low Temperature Al-Al Thermo-compression Bonding of Wafer-Level Hermetic Sealing

2018 ◽  
Vol 101 (5) ◽  
pp. 33-40
Author(s):  
SHIRO SATOH ◽  
HIDEYUKI FUKUSHI ◽  
MASAYOSHI ESASHI ◽  
SHUJI TANAKA
Keyword(s):  
Low Temperature ◽  
Wafer Level ◽  
Hermetic Sealing

Role of Thin Sn Layer for Low Temperature Al-Al Thermo-compression Bonding of Wafer-level Hermetic Sealing

2017 ◽  
Vol 137 (12) ◽  
pp. 432-437 ◽  
Author(s):  
Shiro Satoh ◽  
Hideyuki Fukushi ◽  
Masayoshi Esashi ◽  
Shuji Tanaka
Keyword(s):  
Low Temperature ◽  
Wafer Level ◽  
Hermetic Sealing
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