scholarly journals Functional properties of chondrocytes and articular cartilage using optical imaging to scanning probe microscopy

Author(s):  
Yang Xia ◽  
Eric M. Darling ◽  
Walter Herzog
ACS Nano ◽  
2011 ◽  
Vol 6 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Danielle R. Honigstein ◽  
Jacques Weinroth ◽  
Michael Werman ◽  
Aaron Lewis

Author(s):  
Stephen Ippolito ◽  
Michael Tenney ◽  
Sweta Pendyala ◽  
Larry Fischer ◽  
John Sylvestri ◽  
...  

Abstract This paper describes novel concepts in equipment and measurement techniques that integrate optical electrical microscopy and scanning probe microscopy (SPM) capabilities into a single tool under the umbrella of optical nanoprobe electrical (ONE) microscopy. Optical imaging ONE microscopy permits non-destructive measurement capability that was lost more than a decade ago, when the early metal levels became electrically inaccessible to microprobers. SPM imaging techniques do not have sensitivity to many types of defects, and nanoprobing all of the transistors in an area pinpointed by optical electrical microscopy is often impractical. Thus, in many cases, ONE microscopy capability will permit analytical success instead of failure.


Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.


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