1.6‐2.6 GHz continuous Class‐F power amplifier with gain and power‐added efficiency flatness enhancement by negative feedback structure

2019 ◽  
Vol 61 (7) ◽  
pp. 1716-1722
Author(s):  
Chongchong Qi ◽  
Yonglun Luo ◽  
Xuxu Feng ◽  
Chaoran Dong
Keyword(s):  
Power Amplifier ◽  
Negative Feedback ◽  
Power Added Efficiency ◽  
Feedback Structure ◽  
Class F

Design of a Miniaturized Class F Power Amplifier Using Capacitor Loaded Transmission Lines

Frequenz ◽  
2020 ◽  
Vol 74 (3-4) ◽  
pp. 145-152
Author(s):  
Ali Pirasteh ◽  
Saeed Roshani ◽  
Sobhan Roshani
Keyword(s):  
Power Amplifier ◽  
Mobile Communications ◽  
Transmission Lines ◽  
Low Voltage ◽  
Good Choice ◽  
Band Frequency ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Measurement Results ◽  
Class F

AbstractIn this paper, a new method to decrease the dimensions of the microstrip structures and reducing the overall size of the class F amplifiers is presented. First, by using the PHEMT transistor with a conventional harmonic control circuit (HCC), a low-voltage class F amplifier in the L band frequency at the operating frequency of 1.75 GHz is introduced, which named primitive class F power amplifier. Then, this amplifier is optimized by using capacitor loaded transmission lines (CLTLs). The measurement results of the amplifier show that by using the CLTL structure, the overall size has been reduced 85% (0.23 λg × 0.17 λg). The maximum power-added efficiency (PAE) of the power amplifier is about 77.5 % and the power gain which has been reached to 18.33 dB. The desirable features of this power amplifier, along with its very small size, make this power amplifier a good choice to use for the global system for mobile communications.

A planner Doherty power amplifier with harmonic suppression with open and short ended stubs

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Saeedeh Lotfi ◽  
Saeed Roshani ◽  
Sobhan Roshani ◽  
Maryam Shirzadian Gilan
Keyword(s):  
Power Amplifier ◽  
Power Divider ◽  
Harmonic Suppression ◽  
Power Added Efficiency ◽  
Main Amplifier ◽  
Inverse Topology ◽  
Doherty Power Amplifier ◽  
Amplifier Design ◽  
Doherty Amplifier ◽  
Class F

Abstract This paper presents a new Doherty power amplifier (DPA) with harmonics suppression. A Wilkinson power divider (WPD) with open-ended and short-ended stubs is designed to suppress unwanted signals. To design the power divider in the circuit of the DPA, even and odd mode analyses are utilized. The proposed design operates at range of 1.2–1.6 GHz. The linearity of the suggested DPA is increased about 6 dBm, in comparison with the main amplifier. The designed Doherty amplifier has a power added efficiency (PAE), drain efficiency (DE) and Gain about 60, 61% and 19 dB, respectively. The designed WPD suppresses 2nd up to 14th harmonics with more than 20 dB suppression level, which is useful for suppressing unwanted harmonics in DPA design. ATF-34143 transistors (pHEMT technology) are used for this DPA amplifier design. The main amplifier has class-F topology and class-F inverse topology is used for auxiliary amplifier.

scholarly journals A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

2010 ◽  
Vol 2 (3-4) ◽  
pp. 317-324 ◽  
Author(s):  
Paul Saad ◽  
Christian Fager ◽  
Hossein Mashad Nemati ◽  
Haiying Cao ◽  
Herbert Zirath ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Continuous Wave ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Added Efficiency ◽  
Average Ratio ◽  
Gan Hemt ◽  
Continuous Wave Signal ◽  
Class F

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

Performance study of an inverse class E power amplifier with series tunable parallel resonant tank

2011 ◽  
Vol 3 (4) ◽  
pp. 405-413 ◽  
Author(s):  
Tao Cao ◽  
Songbai He ◽  
Fei You
Keyword(s):  
Power Amplifier ◽  
Supply Voltage ◽  
Power Gain ◽  
Performance Study ◽  
Power Added Efficiency ◽  
Optimum Operation ◽  
Good Agreement ◽  
Class E ◽  
Class F

An analysis of operation of a modified inverse class E power amplifier is presented. The proposed amplifier that has a series tunable parallel resonant tank is similar to a hybrid of class F and inverse class E. The principles and design equations required to determine the optimum operation of the amplifier are analyzed in detail. The practical circuit using LDMOS MRF21010 is shown to be able to deliver 40.02 dBm outpout power at 155 MHz. The amplifier achieves power-added efficiency (PAE) of 78.18% and drain efficiency of 78.42%, and exhibits 25.02 dB power gain when operates from a 21 V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being achieved.

scholarly journals Design of Class F Power Amplifier for 2.4ghz using Third Harmonics

2019 ◽  
Vol 8 (3) ◽  
pp. 7370-7375
Keyword(s):  
Power Amplifier ◽  
Large Scale ◽  
High Efficiency ◽  
Supply Voltage ◽  
Travelling Wave ◽  
Input Power ◽  
Engineering Research ◽  
Power Added Efficiency ◽  
Amplification Process ◽  
Class F

Historically, travelling wave tube amplifier (TWTA) has been a common type of Microwave amplifier used commonly in terrestrial and space application due to their high efficiency and power handling capacity. However due to their bulky nature and also being very expensive, it is difficult to use them commercially in a large scale. Inspired by the advantage such as very less development cost, minimum supply voltage, gradual degradation and numerous commercial applications, Solid State Power Amplifier (SSPA) has been the replacement to vacuum tube Technology. The efficiency of the amplifier is one of the most important task in the microwave engineering research. An important figure of merit, power-added efficiency (PAE), is the main focus. Hence in this paper, class F Power amplifier is designed for 2.4GHz frequency. Class F Amplifier is also called as wave shaping amplifier since the harmonics generated helps the amplification process. The class f PA is biased nearer to the class B amplifier (close cut-off area) so the transistor can move back and forth rapidly to produce the harmonics. The efficiency of class F amplifier depends on how many harmonics are used for the amplification process. Here, the amplification process is performed up to the third harmonics which provides 41.606 dBm output power with 27dBm input power. Also a gain of more than 20.277dBm is achieved when the input given is 27dBm. Several other results like reflection Coefficient and transmission coefficient simulations has also been provided with the power added efficiency (PAE) of 75.402 achieved has also been simulated.

scholarly journals A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology

2016 ◽  
Vol 04 (03) ◽  
pp. 74-78
Author(s):  
Chia-Han Lin ◽  
Hsien-Chin Chiu ◽  
Min-Li Chou ◽  
Hsiang-Chun Wang ◽  
Ming-Feng Huang
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Power Added Efficiency ◽  
Class F

High-efficiency inverse class-F power amplifier using 3/4 spiral symmetric defected ground structure

2011 ◽  
Vol 3 (6) ◽  
pp. 621-625
Author(s):  
Shilei Jin ◽  
Jianyi Zhou ◽  
Lei Zhang
Keyword(s):  
Power Amplifier ◽  
High Performance ◽  
High Efficiency ◽  
Control Circuit ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Resonance Frequencies ◽  
Class F

In this article, the development of a high-efficiency power amplifier (PA) with the inverse class-F configuration and a novel 3/4 spiral defected ground structure (DGS) is presented. The proposed DGS structure has improved rejection characteristic and its resonance frequencies are more convenient to adjust than conventional symmetric and asymmetric spiral structure. The electromagnetic-simulated result shows that the proposed circuit has improved harmonic control performance with simplified structure and less return loss than the conventional microstrip harmonic control circuit. The 3/4 spiral harmonics control circuit (HCC) can be modeled by three parallel RLC resonators. Using the proposed structure a high-performance harmonic control circuit is designed for implementing an inverse class-F PA. For comparison, two inverse class-F PAs operating at 2.4 GHz have been implemented by the microstrip HCC and the proposed HCC, respectively. According to the experiment results, the size of the proposed inverse class-F PA is reduced by 20%, the power-added efficiency and the gain are increased by 4.8% and 1.5 dB, respectively.

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