scholarly journals Numerical Simulation of Thermal Effects in Electric Circuits via Energy Transport equations

PAMM ◽  
2006 ◽  
Vol 6 (1) ◽  
pp. 47-50
Author(s):  
Markus Brunk
Keyword(s):  
Numerical Simulation ◽  
Thermal Effects ◽  
Energy Transport ◽  
Transport Equations ◽  
Electric Circuits

SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS

2008 ◽  
Vol 18 (12) ◽  
pp. 2125-2150 ◽  
Author(s):  
MARKUS BRUNK ◽  
ANSGAR JÜNGEL
Keyword(s):  
Laser Diode ◽  
Energy Transport ◽  
Semiconductor Devices ◽  
Differential Algebraic Equations ◽  
Transport Equations ◽  
Hole Density ◽  
Algebraic Equations ◽  
Pass Filter ◽  
Electric Circuits ◽  
Photo Diode

A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the circuit and by the applied voltage at the device contacts, coming from the circuit. The resulting time-dependent model is a system of nonlinear partial differential-algebraic equations. The one-dimensional transient transport equations are numerically discretized in time by the backward Euler method and in space by a hybridized mixed finite-element method. Numerical results for a circuit consisting of a single-mode heterostructure laser diode, a silicon photo diode, and a high-pass filter are presented.

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Numerical Simulation and Experimental Study on Thermal Effects of 2.94 μm Er:YAG Laser

2012 ◽  
Vol 32 (6) ◽  
pp. 0614002 ◽  
Author(s):  
杨经纬 Yang Jingwei ◽  
王礼 Wang Li ◽  
吴先友 Wu Xianyou ◽  
江海河 Jiang Haihe
Keyword(s):  
Numerical Simulation ◽  
Experimental Study ◽  
Thermal Effects ◽  
Er:Yag Laser

A Nonfield Analytical Method for Solving Energy Transport Equations

2020 ◽  
Vol 142 (4) ◽  
Author(s):  
Vladimir Kulish
Keyword(s):  
Analytical Method ◽  
Energy Transport ◽  
Differential Operators ◽  
Transport Equations ◽  
Theoretical Justification ◽  
Closed Form Solutions ◽  
The Past ◽  
Elegant Method ◽  
Type Integral ◽  
Transport Problems

Abstract In 2000, Kulish and Lage proposed an elegant method, which allows one to obtain analytical (closed-form) solutions to various energy transport problems. The solutions thus obtained are in the form of the Volterra-type integral equations, which relate the local values of an intensive property (e.g., temperature, mass concentration, and velocity) and the corresponding energy flux (e.g., heat flux, mass flux, and shear stress). The method does not require one to solve for the entire domain, and hence, is a nonfield analytical method. Over the past 19 years, the method was shown to be extremely effective when applied to solving numerous energy transport problems. In spite of all these developments, no general theoretical justification of the method was proposed until now. The present work proposes a justification of the procedure behind the method and provides a generalized technique of splitting the differential operators in the energy transport equations.

DNS Study of Transitional Channel Flow Accompanied by Turbulent-Stripe Structures

2010 ◽  
Author(s):  
Shizuma Kaneko ◽  
Takahiro Tsukahara ◽  
Yasuo Kawaguchi
Keyword(s):  
Numerical Simulation ◽  
Reynolds Number ◽  
Transport Process ◽  
Energy Transport ◽  
Fluid Motion ◽  
Turbulent Energy ◽  
Regular Pattern ◽  
Plane Poiseuille Flow ◽  
Reynolds Stresses ◽  
Turbulent Region

A regular pattern of turbulent and quasi-laminar fluid motion is known to appear in plane Poiseuille flow near the lowest Reynolds number for which turbulence can be sustained. We focused on this transitional structure called the turbulent stripe and investigated its energy transport process, using a direct numerical simulation. We obtained the budget for Reynolds stresses including v′w′ and w′u′. The spatial outline of the energy transport with respect to the turbulent stripe is proposed. The turbulent energy is produced in both the turbulent region and the quasi-laminar region, and the energy transfer between these two regions is found to be small.

scholarly journals Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 211-224 ◽  
Author(s):  
Edwin C. Kan ◽  
Zhiping Yu ◽  
Robert W. Dutton ◽  
Datong Chen ◽  
Umberto Ravaioli
Keyword(s):  
Numerical Simulation ◽  
Computational Efficiency ◽  
Recent Progress ◽  
Energy Transport ◽  
Semiconductor Devices ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Drift Diffusion ◽  
Thermoelectric Effects ◽  
Transport Models

According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization, parametrization and numerical properties of the HD and ET models are carefully examined and compared. The well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its formulation and parametrization of the thermoelectric current components. Recent progress in treating negative differential resistances with the ET model and extending the model to thermoelectric simulation is summarized. Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in most modern devices and demonstrates very good numerical properties. The new advances in applicability and computational efficiency of the ET model, as well as its easy implementation by modifying the conventional drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor devices

Numerical simulation of thermal effects on a 2m space telescope

2009 ◽  
Author(s):  
Yanjue Gong ◽  
Fu Zhao ◽  
Li Zhang ◽  
Huiyu Xiang ◽  
Ping Wang
Keyword(s):  
Numerical Simulation ◽  
Thermal Effects ◽  
Space Telescope
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