Characterization of the deposition behavior and changes in bonding structures of hexamethyldisiloxane and decamethylcyclopentasiloxane atmospheric plasma‐deposited films*

Pb addition makes easier to form the high Tc phase in the BSCCO system. However, Pb easily vaporized at high temperature. A controlled Pb potential method has been applied to grow the high Tc phase in films. Initially, films are deposited on cleaved MgO substrates using an rf magnetron sputtering system. These amorphous as-deposited films are heat treated in a sealed gold capsule along with a large pellet of Pb-added BSCCO. Details of the process and characterization of the films have been reported elsewhere (1). Films trated for 0.5h at 850° C contain mainly the low Tc phase with a small amount of the high Tc phase. Hawever, films treated for 3h at 850°C consist mainly of the high Tc phase. This film is superconductive with a Tc(zero) of 106K. The Pb/Bi ratio of the films, analysed by SEM- EDS, are 0.12 and 0.18 for heat tratment times of 0.5 and 3h, respectively. The present study investigates the modulated structures of these films using HREM.

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Aging of Plasma-Deposited Films Prepared from Organic Monomers

Plasma Processes and Polymers ◽

10.1002/ppap.200731905 ◽

2007 ◽

Vol 4 (S1) ◽

pp. S784-S789 ◽

Cited By ~ 23

Author(s):

Sufal Swaraj ◽

Umut Oran ◽

Andreas Lippitz ◽

Jörg F. Friedrich ◽

Wolfgang E. S. Unger

Keyword(s):

Plasma Deposited Films ◽

Deposited Films

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Elaboration and characterization of chemical bath deposited films of cadmium sulfide

physica status solidi (c) ◽

10.1002/pssc.200567001 ◽

2006 ◽

Vol 3 (9) ◽

pp. 3311-3315

Author(s):

D. Soubane ◽

A. Ihlal ◽

M. Nya ◽

A. Outzourhit ◽

G. Nouet

Keyword(s):

Cadmium Sulfide ◽

Deposited Films

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Development and characterization of anti-biofilm coatings applied by Non-Equilibrium Atmospheric Plasma on stainless steel

Food Research International ◽

10.1016/j.foodres.2020.109891 ◽

2020 ◽

pp. 109891

Author(s):

Paula Fernández-Gómez ◽

Ignacio Muro-Fraguas ◽

Rodolfo Múgica-Vidal ◽

Ana Sainz-García ◽

Elisa Sainz-García ◽

...

Keyword(s):

Stainless Steel ◽

Atmospheric Plasma ◽

Non Equilibrium

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Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.485.133 ◽

2011 ◽

Vol 485 ◽

pp. 133-136 ◽

Cited By ~ 3

Author(s):

Ryoichi Saotome ◽

Naoki Wakiya ◽

Takanori Kiguchi ◽

Jeffrey S. Cross ◽

Osamu Sakurai ◽

...

Keyword(s):

Activation Energy ◽

Vapor Deposition ◽

Electrochemical Impedance ◽

Pulsed Laser ◽

Chemical Vapor ◽

Partial Pressures ◽

Chemical Vapor Deposited ◽

Electrical Conductivities ◽

Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

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Characterization of Electrodeposited Cadmium Selenide Thin Films

Dhaka University Journal of Science ◽

10.3329/dujs.v60i1.10352 ◽

2012 ◽

Vol 60 (1) ◽

pp. 137-140 ◽

Cited By ~ 6

Author(s):

RI Chowdhury ◽

MS Islam ◽

F Sabeth ◽

G Mustafa ◽

SFU Farhad ◽

...

Keyword(s):

Thin Films ◽

Cadmium Selenide ◽

Low Cost ◽

X Ray Diffraction ◽

Glass Substrates ◽

Cdse Film ◽

Cell Structures ◽

Deposited Film ◽

Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352 Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

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Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

MRS Proceedings ◽

10.1557/proc-438-393 ◽

1996 ◽

Vol 438 ◽

Author(s):

H. Shibata ◽

S. Kimura ◽

P. Fons ◽

A. Yamada ◽

Y. Makita ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Irradiation ◽

Ion Beam ◽

Low Energy ◽

Irradiation Damage ◽

Molecular Beam Epitaxy Method ◽

Deposited Films ◽

Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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