High‐Temperature Electrical Conduction Mechanisms in Donor‐Doped Bi 4 Ti 3 O 12 Aurivillius Piezoceramics: Role of Oxygen Vacancies

2021 ◽  
pp. 2100272
Author(s):  
Xinchun Xie ◽  
Zhiyong Zhou ◽  
Ruihong Liang ◽  
Xianlin Dong
Keyword(s):  
High Temperature ◽  
Electrical Conduction ◽  
Oxygen Vacancies ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

AC electrical conduction mechanisms and dielectrical studies of DD3 kaolin sintered at high temperature

2018 ◽  
Vol 212 ◽  
pp. 187-195 ◽  
Author(s):  
Ibrahim Khorchani ◽  
Olfa Hafef ◽  
Julian J. Reinosa ◽  
Adel Matoussi ◽  
J.F. Fernandez
Keyword(s):  
High Temperature ◽  
Electrical Conduction ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

Substitution induced magnetic phase transitions and related electrical conduction mechanisms in LaFeO3 nanoparticle

2019 ◽  
Vol 126 (6) ◽  
pp. 064104 ◽  
Author(s):  
T. Lakshmana Rao ◽  
M. K. Pradhan ◽  
U. K. Goutam ◽  
V. Siruguri ◽  
V. R. Reddy ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Electrical Conduction ◽  
Magnetic Phase ◽  
Magnetic Phase Transitions ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

scholarly journals Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

2020 ◽  
Vol 80 (10) ◽  
Author(s):  
S. Bhattarai ◽  
R. Panth ◽  
W.-Z. Wei ◽  
H. Mei ◽  
D.-M. Mei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Conduction ◽  
High Purity ◽  
Localization Length ◽  
Rare Event ◽  
Conduction Mechanisms ◽  
Ge Detector ◽  
Electrical Conduction Mechanisms ◽  
P Type ◽  
Surface Leakage

AbstractFor the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

Role of oxygen vacancies in deciding the high temperature magnetic properties of Ba and Sm substituted BiFeO 3 ceramics

2016 ◽  
Vol 677 ◽  
pp. 252-257 ◽  
Author(s):  
N. Zhang ◽  
Y.W. Yang ◽  
J. Su ◽  
D.Z. Guo ◽  
X.N. Liu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
High Temperature ◽  
Oxygen Vacancies
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