Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

2013 ◽  
Vol 11 (1) ◽  
pp. 32-36 ◽  
Author(s):  
X. Zhang ◽  
X. Ma ◽  
C. Gao ◽  
T. Xu ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Subsequent Annealing ◽  
Low Resistivity ◽  
Si Substrates

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

1999 ◽  
Vol 14 (2) ◽  
pp. 494-499 ◽  
Author(s):  
S. Arscott ◽  
R. E. Miles ◽  
J. D. Kennedy ◽  
S. J. Milne
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Si Substrates ◽  
Pzt Film ◽  
Gaas Substrates

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

Effects of Rapid Thermal Processing on Mbe GaAs on Si

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Ito ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
H. Kano ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Surface Region ◽  
The Other ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTVariations of electron traps in molecular-beam-epitaxial (MBE) GaAs layers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was performed at 760 – 910 °C for 9s with Si02 encapsulant. In contrast with the layer on GaAs, the traps AI(Ec – 0.65eV) and A2(Ec – 0.81eV) are observed in the layer on Si. The trap EL2h, one of the EL2 family, is produced by RTP in the layer on Si. Some GaAs surfaces were etched to prove the deeper region. In the surface region, the concentrartion of EL2h is comparable to that of EL2 produced by RTP in the layer on GaAs. On the other hand, in ∿ 1 μm below the surface, the concentration of EL2h is about ten times as large as that of EL2. It is speculated that the stress from the GaAs/Si interface enhances the production of the EL2h concentration. In addition to the EL2, the traps R1(Ec – 0.23 eV), R2(Ec – 0.40 eV), R3(Ec – 0.43eV) and R4(Ec – 0.56 eV) are produced by RTP in the GaAs grown on Si.

Defects and Strain in GexSi1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

1989 ◽  
Vol 148 ◽  
Author(s):  
K. H. Jung ◽  
Y. M. Kim ◽  
H. G. Chun ◽  
D. L. Kwong ◽  
L. Rabenberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Misfit Dislocation ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Dislocation Loops ◽  
Si Substrates ◽  
Plane View

ABSTRACTWe have grown single and multi-layer epitaxial GexSi1−x/Si structures by RTPCVD on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeHH4 ratios of 14:1 to 95:1 at 5 Torr. Plane view TEM micrographs indicate misfit dislocation free layers were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Plane view TEM micrographs also showed dislocation loops at the interface. When the SiH2C12:GeH4 ratio used was less than 25:1, the GexSil−x layer grew by three-dimensional nucleation, resulting in a high density of defects.

GexSil-x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

1989 ◽  
Vol 146 ◽  
Author(s):  
K. H. Jung ◽  
Y. M. Kim ◽  
H. G. Chun ◽  
D. L. Kwong ◽  
L. Rabenberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Misfit Dislocation ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Dislocation Loops ◽  
Si Substrates ◽  
Layer Structures ◽  
Pile Up

ABSTRACTRapid thermal processing chemical vapor deposition was used to grow single and multilaye repitaxial GexSil-x/Si structures on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeH4 ratios of 14:1 to 95:1 at 5 Torr. Misfit dislocation free layers with few threading dislocations were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Dislocation loops were also found at the interface. GexSil-x layers grown at 1000°C were highly crystalline, but relaxed. In multi-layer structures, AES depth profiles showed Ge pile-up at the GexSi1-x/Si interface of layers with higher Ge concentrations.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

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