Simulation study of temperature sensitivity of silicon nanowire transistors with different types of orientations

2012 ◽  
Vol 7 (5) ◽  
pp. 458-460 ◽  
Author(s):  
Yasir Hashim ◽  
Othman Sidek
2017 ◽  
Vol 16 (5) ◽  
pp. 727-735 ◽  
Author(s):  
Vihar P. Georgiev ◽  
Muhammad M. Mirza ◽  
Alexandru-Iustin Dochioiu ◽  
Fikru Adamu-Lema ◽  
Salvatore M. Amoroso ◽  
...  

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.


2012 ◽  
Vol 70 ◽  
pp. 92-100 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Isabelle Ferain ◽  
Ran Yu ◽  
Pedram Razavi ◽  
Jean-Pierre Colinge

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