scholarly journals Quantum Hydrodynamic Simulation of Hysteresis in the Resonant Tunneling Diode

1995 ◽  
Vol 117 (2) ◽  
pp. 274-280 ◽  
Author(s):  
Zhangxin Chen ◽  
Bernardo Cockburn ◽  
Carl L. Gardner ◽  
Joseph W. Jerome
2010 ◽  
Vol 24 (04n05) ◽  
pp. 401-409
Author(s):  
EUGENIA TULCAN-PAULESCU ◽  
DAN COMǍNESCU ◽  
MARIUS PAULESCU

This article deals with quantum hydrodynamic models (QHD) for electronic transport in semiconductor devices. Numerical simulation of ballistic diode and resonant tunneling diode is discussed. Based on overall results, it can be concluded that the considered QHD models have remarkable abilities to express the refinements of electronic transport in nanodevices.


VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 143-146 ◽  
Author(s):  
Carl L. Gardner ◽  
Christian Ringhofer

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.


2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

Sign in / Sign up

Export Citation Format

Share Document