This article deals with quantum hydrodynamic models (QHD) for electronic transport in semiconductor devices. Numerical simulation of ballistic diode and resonant tunneling diode is discussed. Based on overall results, it can be concluded that the considered QHD models have remarkable abilities to express the refinements of electronic transport in nanodevices.
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling
diode are presented which exhibit enhanced negative differential resistance (NDR) when
compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K,
the smooth QHD simulations predict significant NDR even when the original QHD
model simulations predict no NDR.