Direct Writing Techniques: Electron Beam and Focused Ion Beam

2009 ◽  
pp. 139-181
Author(s):  
T. Djenizian ◽  
C. Lehrer
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Writing

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

scholarly journals Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Michal Horák ◽  
Kristýna Bukvišová ◽  
Vojtěch Švarc ◽  
Jiří Jaskowiec ◽  
Vlastimil Křápek ◽  
...  
Keyword(s):  
Electron Beam ◽  
Comparative Study ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

scholarly journals The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 588
Author(s):  
Chaorong Zhong ◽  
Ruijuan Qi ◽  
Yonghui Zheng ◽  
Yan Cheng ◽  
Wenxiong Song ◽  
...  
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Spherical Aberration ◽  
Ion Beam ◽  
Electrical Contact ◽  
Heating Process ◽  
Comprehensive Understanding ◽  
Irreversible Damage ◽  
Resistivity Variation

Depositing platinum (Pt) interconnectors during the sample preparation process via a focused ion beam (FIB) system is an inescapable procedure for in situ transmission electron microscopy (TEM) investigations. To achieve good electrical contact and avoid irreversible damage in practical samples, the microscopic evolution mechanism of FIB-deposited Pt interconnectors need a more comprehensive understanding, though it is known that its resistivity could be affected by thermal annealing. In this work, an electron-beam FIB-deposited Pt interconnector was studied by advanced spherical aberration (Cs)-corrected TEM combined with an in situ heating and biasing system to clarify the relationship of microscopic evolution to resistivity variation. During the heating process, the Pt interconnector underwent crystallization, organic matter decomposition, Pt nanocrystal growth, grain connection, and conductive path formation, which are combined actions to cause several orders of magnitude of resistivity reduction. The comprehensive understanding of the microscopic evolution of FIB-deposited Pt material is beneficial, not only for optimizing the resistance performance of Pt as an interconnector, but also for understanding the role of C impurities with metal materials. For the purpose of wiring, annealed electron-beam (EB)-deposited Pt material can be recommended for use as an interconnector in devices for research purposes.

scholarly journals Evaluation of ion/electron beam induced deposition for electrical connection using a modern focused ion beam system

2019 ◽  
Vol 49 (1) ◽  
Author(s):  
Byeong-Seon An ◽  
Yena Kwon ◽  
Jin-Su Oh ◽  
Yeon-Ju Shin ◽  
Jae-seon Ju ◽  
...  
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Connection ◽  
Beam System ◽  
Electron Beam Induced Deposition

A comparison of focused ion beam and electron beam induced deposition processes

1996 ◽  
Vol 36 (11-12) ◽  
pp. 1779-1782 ◽  
Author(s):  
S. Lipp ◽  
L. Frey ◽  
C. Lehrer ◽  
E. Demm ◽  
S. Pauthner ◽  
...  
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Beam Induced Deposition ◽  
Deposition Processes

Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers

2016 ◽  
Vol 23 (2) ◽  
pp. 321-328 ◽  
Author(s):  
David R. Diercks ◽  
Brian P. Gorman ◽  
Johannes J. L. Mulders
Keyword(s):  
Electron Beam ◽  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Near Surface ◽  
Surface Features ◽  
Dicobalt Octacarbonyl ◽  
Electron Beam Induced Deposition

AbstractSix precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.

Nano-photomask fabrication using focused ion beam direct writing

CIRP Annals ◽  
2010 ◽  
Vol 59 (1) ◽  
pp. 543-546 ◽  
Author(s):  
F.Z. Fang ◽  
Z.W. Xu ◽  
X.T. Hu ◽  
C.T. Wang ◽  
X.G. Luo ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Writing
Sign in / Sign up

Export Citation Format

Share Document