Nanoscale Imaging of 3D Surfaces and Interfaces

An important part of condensed matter physics in recent years has involved detailed study of inelastic interactions between swift electrons and condensed matter surfaces. Here we will review some aspects of such interactions.Surface excitations have long been recognized as dominant in determining the exchange-correlation energy of charged particles outside the surface. Properties of surface and bulk polaritons, plasmons and optical phonons in plane-bounded and spherical systems will be discussed from the viewpoint of semiclassical and quantal dielectric theory. Plasmons at interfaces between dissimilar dielectrics and in superlattice configurations will also be considered.

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Ultramicrotomy as a Technique for Materials Specimen Preparation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100135745 ◽

1990 ◽

Vol 48 (2) ◽

pp. 428-429

Author(s):

S.R. Glanvill

Keyword(s):

Materials Science ◽

Structural Information ◽

Specimen Preparation ◽

Preparation Technique ◽

Cross Sectional ◽

Surfaces And Interfaces ◽

Beam Analysis ◽

Flat Embedding ◽

20 Nm ◽

Sectional Analysis

This paper summarizes the application of ultramicrotomy as a specimen preparation technique for some of the Materials Science applications encountered over the past two years. Specimens 20 nm thick by hundreds of μm lateral dimension are readily prepared for electron beam analysis. Materials examined include metals, plastics, ceramics, superconductors, glassy carbons and semiconductors. We have obtain chemical and structural information from these materials using HRTEM, CBED, EDX and EELS analysis. This technique has enabled cross-sectional analysis of surfaces and interfaces of engineering materials and solid state electronic devices, as well as interdiffusion studies across adjacent layers.Samples are embedded in flat embedding moulds with Epon 812 epoxy resin / Methyl Nadic Anhydride mixture, using DY064 accelerator to promote the reaction. The embedded material is vacuum processed to remove trapped air bubbles, thereby improving the strength and sectioning qualities of the cured block. The resin mixture is cured at 60 °C for a period of 80 hr and left to equilibrate at room temperature.

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ANTISYMMETRY OF SURFACES AND INTERFACES IN POLAR MATERIALS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1982109 ◽

1982 ◽

Vol 43 (C1) ◽

pp. C1-57-C1-62 ◽

Cited By ~ 1

Author(s):

R. C. Pond ◽

D. B. Holt

Keyword(s):

Surfaces And Interfaces ◽

Polar Materials

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FINITE-TEMPERATURE BAND THEORY OF SURFACES AND INTERFACES OF TRANSITION METALS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19888762 ◽

1988 ◽

Vol 49 (C8) ◽

pp. C8-1677-C8-1682 ◽

Cited By ~ 1

Author(s):

H. Hasegawa ◽

F. Herman

Keyword(s):

Transition Metals ◽

Finite Temperature ◽

Band Theory ◽

Surfaces And Interfaces

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AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

MRS Proceedings ◽

10.1557/proc-766-e5.4 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 1

Author(s):

Vineet Sharma ◽

Arief B. Suriadi ◽

Frank Berauer ◽

Laurie S. Mittelstadt

Keyword(s):

Line Width ◽

Metal Film ◽

Focal Depth ◽

Cost Effective ◽

Pattern Generation ◽

Promising Technique ◽

Critical Dimensions ◽

Exposure Method ◽

Multi Level ◽

3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

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