Ion photon emission microscopy

2003 ◽  
Vol 210 ◽  
pp. 123-128 ◽  
Author(s):  
P Rossi ◽  
B.L Doyle ◽  
J.C Banks ◽  
A Battistella ◽  
G Gennaro ◽  
...  
Keyword(s):  
Photon Emission ◽  
Emission Microscopy

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

A Study of Clustering for the Enhancement of Image Resolution in Dynamic Photon Emission

2019 ◽  
Author(s):  
S. Chef ◽  
C. T. Chua ◽  
C. L. Gan
Keyword(s):  
Signal To Noise Ratio ◽  
Photon Emission ◽  
Optical Signal ◽  
Image Resolution ◽  
Time Dimension ◽  
Processing Scheme ◽  
3D Space ◽  
Initial Acquisition ◽  
Resolution Limits ◽  
Emission Microscopy

Abstract Limited spatial resolution and low signal to noise ratio are some of the main challenges in optical signal observation, especially for photon emission microscopy. As dynamic emission signals are generated in a 3D space, the use of the time dimension in addition to space enables a better localization of switching events. It can actually be used to infer information with a precision above the resolution limits of the acquired signals. Taking advantage of this property, we report on a post-acquisition processing scheme to generate emission images with a better image resolution than the initial acquisition.

Limitations to photon-emission microscopy when applied to “hot” devices

2003 ◽  
Vol 43 (9-11) ◽  
pp. 1645-1650 ◽  
Author(s):  
Hervé Deslandes ◽  
T.R. Lundquist
Keyword(s):  
Photon Emission ◽  
Emission Microscopy

Imaging penetrating radiation through ion photon emission microscopy

2010 ◽  
Author(s):  
Khalid Hattar ◽  
Janelle V. Branson ◽  
Cody J. Powell ◽  
Gyorgy Vizkelethy ◽  
Paolo Rossi ◽  
...  
Keyword(s):  
Photon Emission ◽  
Emission Microscopy

Failure Analysis Methodology on Resistive Open Defects

2014 ◽  
Author(s):  
A.C.T. Quah ◽  
G.B. Ang ◽  
D. Nagalingam ◽  
C.Q. Chen ◽  
H.P. Ng ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Photon Emission ◽  
Analysis Methodology ◽  
Failure Path ◽  
Open Defect ◽  
Emission Microscopy ◽  
Open Defects ◽  
Logic Array ◽  
Failure Site

Abstract This paper describes the observation of photoemissions from saturated transistors along a connecting path with open defect in the logic array. By exploiting this characteristic phenomenon to distinguish open related issues, we described with 2 case studies using Photon Emission Microscopy, CAD navigation and layout tracing to identify the ‘open’ failure path. Further layout and EBAC analysis are then employed to effectively localize the failure site.

Debug and Fault Isolation of an RF/IF Circuit for 3G Cellular Applications With High Leakage: A Case Study

2002 ◽  
Author(s):  
Syd Wilson ◽  
Manoj Nair ◽  
Michael Vicker ◽  
Richard B. Meador ◽  
George Smoot ◽  
...  
Keyword(s):  
Leakage Current ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Cost Effective ◽  
Fault Isolation ◽  
Cellular Phones ◽  
Third Generation ◽  
Mixed Signal ◽  
Emission Microscopy

Abstract First silicon of a cost effective, BICMOS mixed signal RF/IF integrated circuit (IC) for third generation (3G) cellular phones showed high leakage current on the analog receive supply pins in “battery save” mode. Our tasks were to identify and isolate the source of leakage and to fix the design. Alternate debug techniques were used to isolate the cause of the leakage and provide a solution after inconclusive results were obtained using photon emission microscopy,(1) and infrared microthermography techniques.

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