Molecular beam epitaxy growth and characterization of InGaAlAs-collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdown

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588904 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2221 ◽

Author(s):

T. R. Block

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxy Growth

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Electrical Characterization of SiGe Heterojunction Bipolar Transistors (HBTs) Formed by Molecular Beam Epitaxy (MBE)

Condensed Systems of Low Dimensionality - NATO ASI Series ◽

10.1007/978-1-4684-1348-9_51 ◽

1991 ◽

pp. 669-674

Author(s):

D. J. Godfrey

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Electrical Characterization ◽

Bipolar Transistors

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Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2884749 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1115 ◽

Author(s):

D. Lubyshev ◽

J. M. Fastenau ◽

Y. Wu ◽

W. K. Liu ◽

M. T. Bulsara ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Bipolar Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth for a heavily-doped thin base layer of heterojunction bipolar transistors used for high-speed integrated circuits

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80148-6 ◽

1995 ◽

Vol 150 ◽

pp. 1297-1301 ◽

Author(s):

N. Iizuka ◽

K. Tsuda ◽

T. Nozu ◽

T. Sugiyama ◽

Y. Kuriyama ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxy Growth ◽

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Gas source molecular beam epitaxy growth of heterojunction bipolar transistors containing 1 monolayer δ−Be

Journal of Crystal Growth ◽

10.1016/0022-0248(91)91031-5 ◽

1991 ◽

Vol 111 (1-4) ◽

pp. 515-520 ◽

Author(s):

J.E. Cunningham ◽

T.Y. Kuo ◽

A. Ourmazd ◽

K. Goossen ◽

W. Jan ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxy Growth ◽

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Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80277-j ◽

1995 ◽

Vol 150 ◽

pp. 585-590 ◽

Author(s):

Jun-ichi Shirakashi ◽

Toshiaki Azuma ◽

Fumihiko Fukuchi ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Hole Concentration ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Molecular Beam Epitaxy

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Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106099 ◽

2021 ◽

Vol 135 ◽

pp. 106099

Author(s):

Qihua Zhang ◽

Xue Yin ◽

Eli Martel ◽

Songrui Zhao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Si Substrate ◽

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591440 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1623 ◽

Author(s):

T. C. Hasenberg ◽

P. S. Day ◽

E. M. Shaw ◽

D. J. Magarrell ◽

J. T. Olesberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Laser Diodes ◽

Infrared Laser ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Midwave Infrared ◽

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Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors

Properties of Impurity States in Superlattice Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5553-3_3 ◽

1988 ◽

pp. 19-28 ◽

Author(s):

J. L. Liévin ◽

F. Alexandre ◽

C. Dubon-Chevallier

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

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