Characterization of Permalloy Thin Films Via Variable Sample Exit Angle Ultrasoft X-Ray Fluorescence Spectrometry

1989 ◽  
pp. 261-268 ◽  
Author(s):  
George Andermann ◽  
Francis Fujiwara ◽  
T. C. Huang ◽  
J. K. Howard ◽  
N. Staud
Keyword(s):  
Thin Films ◽  
Fluorescence Spectrometry ◽  
Exit Angle ◽  
X Ray ◽  
Permalloy Thin Films

Characterization of Permalloy Thin Films via Variable Sample Exit Angle Ultrasoft X-ray Fluorescence Spectrometry

1988 ◽  
Vol 32 ◽  
pp. 261-268 ◽  
Author(s):  
George Andermann ◽  
Francis Fujiwara ◽  
T.C. Huang ◽  
J.K. Howard ◽  
N. Staud
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Analytical Tool ◽  
Fluorescence Spectrometry ◽  
Exit Angle ◽  
X Ray ◽  
Escape Depth ◽  
Sample Depth ◽  
Permalloy Thin Films

Recently variable sample exit-angle x-ray fluorescence spectrometry (VEA-XRF) has been shorn to be a useful analytical tool for monitoring the oxidation of the surfaces of bulk Cu, Ni as well as that of Fe. In these studies advantage was taken of the well known phenomenon that for each transition metal oxide (MO) Lβ/Lα intensity ratio value is higher than for the transition metal (M), itself. Within the limits of the photon-escape depth de, which for these photons are generally below 5000 Å, varying the sample exit-angle θ offers an opportunity for seeing whether or not the oxidation of the surfaces of bulk M belongs to one of the following two classes: (I) uniform oxidation throughout the entire observable sample-depth, (II) preferential oxidation of the top surface layer, i.e. depth dependent oxidation.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

Magnetic characterization of ion-beam sputter deposited permalloy thin films

1992 ◽  
Vol 104-107 ◽  
pp. 1847-1850 ◽  
Author(s):  
Michael A. Russak ◽  
Christopher V. Jahnes ◽  
Erik Klokholm ◽  
Bojan Petek
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Characterization ◽  
Sputter Deposited ◽  
Permalloy Thin Films

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray
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