Flexible Architecture for Streaming and Visualization of Large Virtual Microscopy Images

2014 ◽  
pp. 34-43 ◽  
Author(s):  
Germán Corredor ◽  
Marcela Iregui ◽  
Viviana Arias ◽  
Eduardo Romero
Keyword(s):  
Virtual Microscopy ◽  
Flexible Architecture ◽  
Microscopy Images

scholarly journals Detection and Segmentation of Cell Nuclei in Virtual Microscopy Images: A Minimum-Model Approach

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Stephan Wienert ◽  
Daniel Heim ◽  
Kai Saeger ◽  
Albrecht Stenzinger ◽  
Michael Beil ◽  
...  
Keyword(s):  
Virtual Microscopy ◽  
Cell Nuclei ◽  
Microscopy Images ◽  
Model Approach

The Role of Computer-Aided 3-Dimensional Analytic Tools and Virtual Microscopy in the Investigation of Radiologic-Pathologic Correlation

2009 ◽  
Vol 133 (6) ◽  
pp. 912-915
Author(s):  
Keizo Furuya ◽  
Toshiharu Maeda ◽  
Seiji Nakanura ◽  
Takanori Kikuchi
Keyword(s):  
Computed Tomography ◽  
Multidetector Computed Tomography ◽  
Virtual Microscopy ◽  
3 Dimensional ◽  
Pathologic Correlation ◽  
Computed Tomography Images ◽  
Radiologic Imaging ◽  
Computer Aided ◽  
Microscopy Images

Abstract To cope with recent advances in radiologic imaging technology, a corresponding method for pathomorphologic demonstration should be developed to promote better understanding of radiologic-pathologic correlation. We attempted to obtain gross and microscopic images by using a 3-dimensional analytic tool and virtual microscopy and to link these images with multidetector computed tomography images. Surgically resected specimens were sliced to a thickness of 3 mm, and the digital images of each slice were 3-dimensionally reconstructed with RATOC TRI/3D SRF II software. Histology slides were digitized by using virtual microscopy with an Olympus VS-100. We obtained clear gross pathologic images in arbitrary cut sections of organs, and it was possible to rotate these 3-dimensional images at any angle. Furthermore, we created synchronous cut-section movies of computed tomography and gross pathologic images. Subsequently, we switched from these cut-section movies to virtual microscopy images by clicking on the hyperlink button to observe radiologic-pathologic correlation.

Specimen Collection Effect in Scanning Electron Microscopy Images

1972 ◽  
Vol 30 ◽  
pp. 448-449
Author(s):  
J. Temple Black ◽  
Jose Guerrero
Keyword(s):  
Surface Morphology ◽  
Secondary Electron Emission ◽  
Secondary Electrons ◽  
Charge Effects ◽  
Material Density ◽  
Specimen Collection ◽  
The Subject ◽  
Curved Paths ◽  
Subject Material ◽  
Microscopy Images

In the SEM, contrast in the image is the result of variations in the volume secondary electron emission and backscatter emission which reaches the detector and serves to intensity modulate the signal for the CRT's. This emission is a function of the accelerating potential, material density, chemistry, crystallography, local charge effects, surface morphology and especially the angle of the incident electron beam with the particular surface site. Aside from the influence of object inclination, the surface morphology is the most important feature In producing contrast. “Specimen collection“ is the name given the shielding of the collector by adjacent parts of the specimen, producing much image contrast. This type of contrast can occur for both secondary and backscatter electrons even though the secondary electrons take curved paths to the detector-collector.Figure 1 demonstrates, in a unique and striking fashion, the specimen collection effect. The subject material here is Armco Iron, 99.85% purity, which was spark machined.

Scanning ion microscopy images

1987 ◽  
Vol 45 ◽  
pp. 180-181
Author(s):  
R. Levi-Setti ◽  
J.M. Chabala ◽  
Y.L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Emission ◽  
Scanning Method ◽  
Ion Channeling ◽  
Secondary Ions ◽  
High Resolution Images ◽  
Ion Microscopy ◽  
Z Contrast ◽  
Focused Beams ◽  
Microscopy Images

Finely focused beams extracted from liquid metal ion sources (LMIS) provide a wealth of secondary signals which can be exploited to create high resolution images by the scanning method. The images of scanning ion microscopy (SIM) encompass a variety of contrast mechanisms which we classify into two broad categories: a) Emission contrast and b) Analytical contrast.Emission contrast refers to those mechanisms inherent to the emission of secondaries by solids under ion bombardment. The contrast-carrying signals consist of ion-induced secondary electrons (ISE) and secondary ions (ISI). Both signals exhibit i) topographic emission contrast due to the existence of differential geometric emission and collection effects, ii) crystallographic emission contrast, due to primary ion channeling phenomena and differential oxidation of crystalline surfaces, iii) chemical emission or Z-contrast, related to the dependence of the secondary emission yields on the Z and surface chemical state of the target.

A Transmission Electron Microscopical Investigation of Phase Transformations in TiNi

1980 ◽  
Vol 38 ◽  
pp. 340-341
Author(s):  
P. Moine ◽  
G. M. Michal ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Phase Transformations ◽  
Applied Stress ◽  
Structural Changes ◽  
Microscopical Investigation ◽  
Temperature Range ◽  
Transmission Electron ◽  
Electron Microscopical ◽  
Diffraction Effects ◽  
Microscopy Images

Premartensitic effects in near equiatomic TiNi have been pointed out by several authors(1-5). These include anomalous contrast in electron microscopy images (mottling, striations, etc. ),diffraction effects(diffuse streaks, extra reflections, etc.), a resistivity peak above Ms (temperature at which a perceptible amount of martensite is formed without applied stress). However the structural changes occuring in this temperature range are not well understood. The purpose of this study is to clarify these phenomena.

Tissue microarray based classification of early and late stage colorectal cancer in optical and virtual microscopy

2007 ◽  
Vol 45 (05) ◽  
Author(s):  
F Sipos ◽  
S Spisák ◽  
T Krenács ◽  
O Galamb ◽  
B Galamb ◽  
...  
Keyword(s):  
Colorectal Cancer ◽  
Tissue Microarray ◽  
Late Stage ◽  
Virtual Microscopy

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

A Novel Integrated Reliability Test System for BEOL TDDB Study

2012 ◽  
Author(s):  
Jifeng Chen ◽  
Peilin Song ◽  
Thomas M. Shaw ◽  
Franco Stellari ◽  
Lynne Gignac ◽  
...  
Keyword(s):  
Preliminary Analysis ◽  
Dielectric Breakdown ◽  
Test System ◽  
Accurate Information ◽  
Reliability Test ◽  
Electrical Measurements ◽  
Time Dependent Dielectric Breakdown ◽  
Microscopy Images ◽  
Insight Into

Abstract In this paper, we propose a new methodology and test system to enable the early detection and precise localization of Time-Dependent-Dielectric-Breakdown (TDDB) occurrence in Back-End-of-Line (BEOL) interconnection. The methodology is implemented as a novel Integrated Reliability Test System (IRTS). In particular, through our methodology and test system, we can easily synchronize electrical measurements and emission microscopy images to gather more accurate information and thereby gain insight into the nature of the defects and their relationship to chip manufacturing steps and materials, so that we can ultimately better engineer these steps for higher reliable systems. The details of our IRTS will be presented along with a case study and preliminary analysis results.

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