Electric Field Heating of Supported and Free-Standing AuPd Fine Wires

1986 ◽  
pp. 463-463
Author(s):  
C. G. Smith ◽  
M. N. Wybourne
Keyword(s):  
Electric Field ◽  
Free Standing

Electric field induced macroscopic flow in free-standing ferroelectric films

1991 ◽  
Vol 122 (1) ◽  
pp. 253-260 ◽  
Author(s):  
Gerd Hauck ◽  
Hans Dieter Koswig
Keyword(s):  
Electric Field ◽  
Ferroelectric Films ◽  
Free Standing

scholarly journals Screening in Graphene: Response to External Static Electric Field and an Image-Potential Problem

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1561
Author(s):  
Vyacheslav M. Silkin ◽  
Eugene Kogan ◽  
Godfrey Gumbs
Keyword(s):  
Electric Field ◽  
First Principles ◽  
Density Functional ◽  
Potential Problem ◽  
Graphene Monolayer ◽  
Theory Approach ◽  
Static Electric Field ◽  
Charge Density Distribution ◽  
Free Standing ◽  
Functional Theory

We present a detailed first-principles investigation of the response of a free-standing graphene sheet to an external perpendicular static electric field E. The charge density distribution in the vicinity of the graphene monolayer that is caused by E was determined using the pseudopotential density-functional theory approach. Different geometries were considered. The centroid of this extra density induced by an external electric field was determined as zim = 1.048 Å at vanishing E, and its dependence on E has been obtained. The thus determined zim was employed to construct the hybrid one-electron potential which generates a new set of energies for the image-potential states.

Electrical Properties of Schottky-Diodes Based on B Doped Diamond

2018 ◽  
Vol 924 ◽  
pp. 931-934
Author(s):  
Tobias Erlbacher ◽  
Andreas Huerner ◽  
Yi Lin Zhu ◽  
Linh Bach ◽  
Andreas Schletz ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Hole Mobility ◽  
Free Standing ◽  
Semiconductor Interface ◽  
Forward Current ◽  
Diamond Substrate ◽  
Monocrystalline Diamond

Schottky diodes fabricated on free-standing B doped monocrystalline diamond substrate have been investigated. As expected, reverse leakage current due to Schottky barrier lowering has been observed due to the high electric field at the metal-semiconductor interface. Forward current is highest under operating temperatures between 400 and 450K due to incomplete ionization hole mobility dependence on temperature. It is demonstrated that the static device characteristics in the temperature range from 300K to 450K can be modelled by parametrizing an analytical introduced for unipolar SiC and Si diodes.

scholarly journals The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 712
Author(s):  
Wen-Chieh Ho ◽  
Yao-Hsing Liu ◽  
Wen-Hsuan Wu ◽  
Sung-Wen Huang Chen ◽  
Jerry Tzou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electric Field ◽  
Structural Optimization ◽  
Breakdown Voltage ◽  
Device Performance ◽  
Free Standing ◽  
High Crystalline Quality ◽  
Mesa Structure ◽  
High Breakdown Voltage ◽  
Structure Improvement

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60° bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

scholarly journals A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations -=SUP=-*-=/SUP=-

2022 ◽  
Vol 130 (3) ◽  
pp. 376
Author(s):  
Aparna Das
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Visible Range ◽  
Internal Electric Field ◽  
Free Standing ◽  
Polar Plane ◽  
Light Emitting ◽  
Group Iii ◽  
Group Iii Nitride

Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN) are crucial elements for solid-state lighting and visible light communication applications. The most widely used growth plane for group III-nitride LEDs is the polar plane (c-plane), which is characterized by the presence of a polarization-induced internal electric field in heterostructures. It is possible to address long-standing problems in group III-nitride LEDs, by using semipolar and nonpolar orientations of GaN. In addition to the reduction in the polarization-induced internal electric field, semipolar orientations potentially offer the possibility of higher indium incorporation, which is necessary for the emission of light in the visible range. This is the preferred growth orientation for green/yellow LEDs and lasers. The important properties such as high output power, narrow emission linewidth, robust temperature dependence, large optical polarization ratio, and low-efficiency droop are demonstrated with semipolar LEDs. To harness the advantages of semipolar orientations, comprehensive studies are required. This review presents the recent progress on the development of semipolar InGaN/GaN quantum well LEDs. Semipolar InGaN LED structures on bulk GaN substrates, sapphire substrates, free-standing GaN templates, and on Silicon substrates are discussed including the bright prospects of group III-nitrides. Keywords: Group III-nitride semiconductor, semipolar, light-emitting diodes, InGaN/GaN quantum well.

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