Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD

2001 ◽  
pp. 124-127 ◽  
Author(s):  
W. Pyka ◽  
C. Heitzinger ◽  
N. Tamaoki ◽  
T. Takase ◽  
T. Ohmine ◽  
...  
Keyword(s):  
Poly Silicon

Minimized program disturb for vertically stacked junctionless charge-trapping flash memory devices by adopting in-situ doped poly-silicon channel

2015 ◽  
Vol 147 ◽  
pp. 5-9
Author(s):  
Hsin-Kai Fang ◽  
Kuei-Shu Chang-Liao ◽  
Chun-Yuan Chen ◽  
Po-Hao Chen ◽  
Dong-Yan Li ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Devices ◽  
Poly Silicon
Sign in / Sign up

Export Citation Format

Share Document