The Pressure Sensor Fabrication Process

AbstractThis paper presents an approach for decoding the pressure information exerted over a piece of fabric by means of resistive sensing. The proposed sensor includes a distributed resistive grids constructed by two systems of orthogonally contacted electrical conductive yarns, with no external sensing element to be attached on the fabric. Since the conductive yarns serve as the sensing and wiring elements simultaneously, this design simplifies the fabrication process, reduces the cost and makes the production of large area flexible pressure sensor possible. The location of the pressure applied on the fabric can be identified by detecting the position where the change of the resistances occurs between two embroidered yarns. Meanwhile, the magnitude of the pressure can be acquired by measuring the variations of the resistance. In order to eliminate the “crosstalk” effect between adjoining fibers, the yarns were separately wired on the fabric surface.

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Thin Diamond Film on Silicon Substrates for Pressure Sensor Fabrication

Materials ◽

10.3390/ma13173697 ◽

2020 ◽

Vol 13 (17) ◽

pp. 3697

Author(s):

Stefano Salvatori ◽

Sara Pettinato ◽

Armando Piccardi ◽

Vadim Sedov ◽

Alexey Voronin ◽

...

Keyword(s):

Pressure Sensor ◽

Electromagnetic Interference ◽

Chemical Vapor ◽

High Hardness ◽

Single Mode ◽

Single Mode Fiber ◽

Silicon Substrates ◽

Sensing Element ◽

Optoelectronic System ◽

Sensor Fabrication

Thin polycrystalline diamond films chemically vapor deposited on thinned silicon substrates were used as membranes for pressure sensor fabrication by means of selective chemical etching of silicon. The sensing element is based on a simple low-finesse Fabry–Pérot (FP) interferometer. The FP cavity is defined by the end-face of a single mode fiber and the diamond diaphragm surface. Hence, pressure is evaluated by measuring the cavity length by an optoelectronic system coupled to the single mode fiber. Exploiting the excellent properties of Chemical Vapor Deposition (CVD) diamond, in terms of high hardness, low thermal expansion, and ultra-high thermal conductivity, the realized sensors have been characterized up to 16.5 MPa at room temperature. Preliminary characterizations demonstrate the feasibility of such diamond-on-Si membrane structure for pressure transduction. The proposed sensing system represents a valid alternative to conventional solutions, overcoming the drawback related to electromagnetic interference on the acquired weak signals generated by standard piezoelectric sensors.

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CMOS-MEMS Integration in Micro Fabry Perot Pressure Sensor Fabrication

Jurnal Teknologi ◽

10.11113/jt.v64.2083 ◽

2013 ◽

Vol 64 (3) ◽

Cited By ~ 1

Author(s):

Nor Hafizah Ngajikin ◽

Low Yee Ling ◽

Nur Izzati Ismail ◽

Abu Sahmah Mohd Supaát ◽

Mohd Haniff Ibrahim ◽

...

Keyword(s):

Pressure Sensor ◽

Material Selection ◽

Integrated System ◽

Oxide Semiconductor ◽

Deep Reactive Ion Etching ◽

Sensor Fabrication ◽

Fabry Perot ◽

Mems Technology ◽

Cmos Mems ◽

Spectrum Shift

Integration of Complimentary Metal-Oxide-Semiconductor (CMOS) and Microelectromechanical System (MEMS) technology in Fabry Perot blood pressure sensor (FPPS) fabrication processes is presented. The sensor that comprises of a 125 µm diameter of circular diaphragm is modeled to be fabricated using integration of CMOS-MEMS technology. To improve the sensor reliability, a sleeve structure is designed at the back of Silicon wafer by using MEMS Deep Reactive ion Etching (DRIE) process for fiber insertion, which offers a large bonding area. Optical light source at 550 nm wavelength is chosen for this device. The sensor diaphragm mechanic deflection and its optical spectrum is theoretically analyzed and simulated. The analytical results show high linear response in the range of 0 to 40 kPa and a reasonable sensitivity of 1.83 nm/kPa (spectrum shift/pressure) has been obtained for this sensor. The proposed integration of CMOS-MEMS technology limit the material selection yet produces an economical method of FPPS fabrication and integrated system.

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A Novel Silicon Base Piezoresistive Pressure Sensor Using Front Side Etching Process

Electronic and Photonic Packaging, Electrical Systems and Photonic Design, and Nanotechnology ◽

10.1115/imece2003-41092 ◽

2003 ◽

Author(s):

Chih-Tang Peng ◽

Ji-Cheng Lin ◽

Chun-Te Lin ◽

Kuo-Ning Chiang ◽

Jin-Shown Shie

Keyword(s):

Pressure Sensor ◽

Thermal Loading ◽

Fabrication Process ◽

Back Side ◽

The Novel ◽

Front Side ◽

Sensor Performance ◽

Novel Structure ◽

Piezoresistive Pressure Sensor ◽

Packaging Structure

By applying the etching via technology, this study proposes a novel front-side etching fabrication process for a silicon based piezoresistive pressure sensor to replace the conventional backside bulk micro-machining. The distinguishing features of this novel structure are chip size reduction and fabrication costs degradation. In order to investigate the sensor performance and the sensor packaging effect of the structure proposed in this research, the finite element method was adopted for analyzing the sensor sensitivity and stability. The sensitivity and the stability of the novel sensor after packaging were studied by applying mechanical as well as thermal loading to the sensor. Furthermore, the fabrication process and the sensor performance of the novel pressure sensor were compared with the conventional back-side etching type pressure sensor for the feasibility validation of the novel sensor. The results showed that the novel pressure sensor provides better sensitivity than the conventional one, and the sensor output signal stability can be enhanced by better packaging structure designs proposed in this study. Based on the above findings, this novel structure pressure sensor shows a high potential for membrane type micro-sensor application.

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CHLORIDE SENSOR FABRICATION BASED ON SPE Ag/AgCl THROUGH CYCLIC VOLTAMMETRIC TECHNIQUE: SCAN RATE EFFECT

SINERGI ◽

10.22441/sinergi.2021.3.012 ◽

2021 ◽

Vol 25 (3) ◽

pp. 351

Author(s):

Mas'ud Asadullah ◽

Sagir Alva ◽

Ali Rinaldi ◽

Rita Sundari

Keyword(s):

Selectivity Coefficient ◽

Rate Effect ◽

Fabrication Process ◽

Cyclic Voltammetric ◽

Ion Sensor ◽

Validation Test ◽

Lifetime Test ◽

Sensor Fabrication ◽

Two Samples ◽

Scan Rate

The Cyclic Voltammetric (CV) technique is one of the Ag/AgCl fabrication processes. In electrochemical processes using this CV technique, the microstructure of the surface of a substrate or electrode can affect the scan rate. Thus, this study aims to identify the scan rate effect of the Cl-ion sensor fabrication process using the CV technique on the performance of the Cl-ion sensor. First, the CV process was carried out in one cycle to grow the AgCl layer on the Ag surface. Then, this process was carried out at varied scan rates of 20, 40, 60, 80, and 100 mV/s. After completing the Ag/AgCl fabrication process, it was followed by the characterization process, selectivity coefficient test, lifetime test, and validation test to compare the test results of the Cl SPE Ag/AgCl ion sensor with Ag/AgCl commercial. The results showed that the optimum Cl-ion sensor response was obtained at the scan rate of 60 mV/s. Then, based on the validation test, the Cl-ion in the two samples did not show significant differences. Therefore, it indicates that the SPE Ag/AgCl ion sensor has the same performance as the Ag/AgCl commercial.

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Micro pressure sensor fabrication without problem of stiction for a wider range of measurement

Proceedings of IEEE Sensors, 2004. ◽

10.1109/icsens.2004.1426305 ◽

2006 ◽

Author(s):

C.W. Liu ◽

H.S. Ko ◽

Chie Gau ◽

C.G. Liu

Keyword(s):

Pressure Sensor ◽

Sensor Fabrication

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Intelligent hermetically sealed LTCC Package with an integrated sensor system for avionics

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/cicmt-2012-wp25 ◽

2012 ◽

Vol 2012 (CICMT) ◽

pp. 000507-000511

Author(s):

Josef Leschik ◽

Anton Harasim ◽

Jens Müller

Keyword(s):

Pressure Sensor ◽

Temperature Sensor ◽

Internal State ◽

Fabrication Process ◽

Sensor System ◽

Integrated Sensors ◽

Integrated Sensor ◽

Self Monitoring ◽

First Results

In this article, the fabrication process and the first results of a deep-drawn LTCC housing with integrated sensors in the field of avionic are presented This housing includes a pressure sensor that monitors the density of the housing - “self monitoring”. Furthermore, a humidity and a temperature sensor in the inner or outer layers of the LTCC decks are implemented, so that the internal state of the circuit can be monitored. Due to high integration (miniaturization) of the sensors the condition of the circuit can be monitored continuously. This allows the assembly upon the occurrence of an irregularity, such as the increase in moisture, to be replaced specifically. As a result, high costs in the field of material, maintenance, repairing und breakdown can be saved.

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