Modelling structural changes in the near-surface region in amorphous silica

1995 ◽  
Vol 31 (1) ◽  
pp. 37-39
Author(s):  
G. S. Yablonskii ◽  
D. V. Kundirenko ◽  
L. A. Kulabukhova ◽  
N. Ya. Barash
Keyword(s):  
Amorphous Silica ◽  
Structural Changes ◽  
Surface Region ◽  
Near Surface

scholarly journals ON WHEEL–RAIL CONTACT SURFACE PHENOMENA WITH STRUCTURAL CHANGES AND ‘WHITE ETCHING LAYERS’ GENERATION

Transport ◽  
2012 ◽  
Vol 27 (2) ◽  
pp. 196-205 ◽  
Author(s):  
Libor Beneš
Keyword(s):  
Structural Changes ◽  
Surface Region ◽  
Rolling Contact ◽  
Contact Friction ◽  
Surface Phenomena ◽  
Wheel Surface ◽  
Near Surface ◽  
High Microhardness ◽  
Stress Formation ◽  
Surface Changes

The main aim of this work was a study of the microstructure transformations with the residual stress formation that is induced by rolling contact friction and adhesive wore in the wheel–rail system. Several small railsurface samples, we term them as the ‘chips’, and a piece of wheel sample were chosen for the analyses of the surface changes on the wheel–rail surface. A multitude of different experiments were carried out in order to analyse the microstructure changes at the surface and the near-surface region of the material samples and, thus, to contribute to the understanding of the complex wheel–rail rolling contact phenomena – and its degradation mechanisms. The formation of nano-structured martensite and carbides on the rail and wheel surface causes the extremely high microhardness valuees and the strong corrosion resistance of the so called White Etching Layers (WEL).

Correlation of Electric Parameters Change and Structural Changes Induced in Silicon Systems by Pulsed Magnetic Field Treatment

1993 ◽  
Vol 319 ◽  
Author(s):  
Mark N. Levin ◽  
Vladimir M. Maslovsky
Keyword(s):  
Magnetic Field ◽  
Structural Changes ◽  
Vacancy Concentration ◽  
Surface Region ◽  
Lattice Parameter ◽  
Pulsed Magnetic Field ◽  
Crystal Lattice Parameter ◽  
Free Electrons ◽  
Near Surface ◽  
Electric Parameters

AbstractThe results of comparison investigations of structural and electric parameters changes in silicon systems induced by pulsed magnetic field (MF) treatment (PMFT) are presented for the first time. The characteristics of (PMFT) that can induce considerable parameters changes of the silicon system were determined. Amplitudc of thc magnctic impulscs is 0.1-0.3 MA/m and duration of thc impulscs is 10-30 ms. The investigations were carried out by means of scanning electron microscope (SEM), X-ray diffraction analysis, C-V and DLTS spectroscopies. The PMFT induces the generation of A-centers in the near-surface region of silicon, the changes of the crystal lattice parameter and the concentration of free electrons and results in emergence of an extent structural microdefects in subsurface. The obtained experimental data testifies that PMFT is possible to increase the vacancy concentration at subsurface region of silicon.

Shot Peening - A New Method for Improving Mechanical Properties of Structural Ceramics

2006 ◽  
Vol 317-318 ◽  
pp. 277-280 ◽  
Author(s):  
Henryk Tomaszewski ◽  
K. Godwod ◽  
Ryszard Diduszko ◽  
F. Carrois ◽  
J.M. Duchazeaubeneix
Keyword(s):  
Compressive Stress ◽  
Shot Peening ◽  
Structural Changes ◽  
Treatment Time ◽  
Surface Region ◽  
Microplastic Deformation ◽  
Material Surface ◽  
Near Surface ◽  
Compressive Stresses ◽  
Ultrasonic Shot Peening

Shot peening is commonly used to modify material surface layers and improve the strength of metal components. As it occurred the same technique can be applied for brittle ceramics. High compressive stresses up to 2.4 GPa were introduced into near surface region of alumina and zirconia ceramics by ultrasonic shot peening maintaining its surface integrity. Dependence between diameter of tungsten balls, treatment time (at constant mass of balls in the housing and vibration amplitude) and level of compressive stress introduced was determined for both ceramics with nano and micrograins. Coarser grained ceramics was found to be more sensible to structural changes responsible for stress creation than the smaller one. High microplastic deformation in shot peened surface layer of ceramics was observed by X-ray diffraction. An increase of hardness and surface resistance to fracture with increasing level of compressive stress was found.

Preparation of cross-sectional samples for near-surface TEM studies

1987 ◽  
Vol 45 ◽  
pp. 380-381
Author(s):  
R.C. Dickenson ◽  
K.R. Lawless
Keyword(s):  
Standard Sample ◽  
Surface Region ◽  
Specimen Preparation ◽  
Thick Sheet ◽  
Drill Bit ◽  
Sample Holder ◽  
Metal Interface ◽  
Cross Sectional ◽  
Near Surface ◽  
Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

1994 ◽  
Vol 52 ◽  
pp. 636-637
Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard
Keyword(s):  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Thermal Evaporation ◽  
Surface Region ◽  
Near Surface ◽  
Laser Patterning ◽  
Electroless Copper ◽  
Excimer Laser Irradiation ◽  
Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

Annealing Effects at the Near-Surface Region of Gallium Arsenide

1992 ◽  
Vol 105-110 ◽  
pp. 1383-1386 ◽  
Author(s):  
Hugh E. Evans ◽  
D.L. Smith ◽  
P.C. Rice-Evans ◽  
G.A. Gledhill ◽  
A.M. Moore
Keyword(s):  
Gallium Arsenide ◽  
Surface Region ◽  
Near Surface ◽  
Annealing Effects

scholarly journals Interactions of Ruddlesden-Popper Phases and Migration-Induced Field-Stabilized Polar Phase in Strontium Titanate

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 693
Author(s):  
Christian Ludt ◽  
Elena Ovchinnikova ◽  
Anton Kulikov ◽  
Dmitri Novikov ◽  
Sibylle Gemming ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Density Functional ◽  
Surface Region ◽  
Point Of View ◽  
Polar Phase ◽  
Near Surface ◽  
Atomic Displacements ◽  
Induced Field ◽  
And Migration ◽  
Novel Concept

This work focuses on the validation of a possible connection of the known Ruddlesden-Popper (RP) phases and the novel concept of the migration-induced field-stabilized polar (MFP) phase. To study this subject, model structures of RP phases in bulk strontium titanate are analyzed by means of density functional theory (DFT). The obtained geometries are compared to experimental MFP data. Good agreement can be found concerning atomic displacements in the pm range and lattice strain inferred by the RP phases. Looking at the energy point of view, the defect structures are on the convex hull of the Gibb’s free energy. Although the dynamics to form the discussed defect models are not addressed in detail, the interplay and stability of the described defect model will add to the possible structure scenarios within the near-surface region of strontium titanate. As a result, it can be suggested that RP phases generally favor the MFP formation.

Electronic Impact of Inclusions in Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Erik M. Muller ◽  
John Smedley ◽  
Balaji Raghothamachar ◽  
Mengjia Gaowei ◽  
Jeffrey W. Keister ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Secondary Phase ◽  
Surface Region ◽  
Phase Region ◽  
Electron Trapping ◽  
Near Surface ◽  
X Ray ◽  
Photoconductive Gain ◽  
Single Crystal Diamond ◽  
Topography Data

AbstractX-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.

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