Correlation of Electric Parameters Change and Structural Changes Induced in Silicon Systems by Pulsed Magnetic Field Treatment

1993 ◽  
Vol 319 ◽  
Author(s):  
Mark N. Levin ◽  
Vladimir M. Maslovsky

AbstractThe results of comparison investigations of structural and electric parameters changes in silicon systems induced by pulsed magnetic field (MF) treatment (PMFT) are presented for the first time. The characteristics of (PMFT) that can induce considerable parameters changes of the silicon system were determined. Amplitudc of thc magnctic impulscs is 0.1-0.3 MA/m and duration of thc impulscs is 10-30 ms. The investigations were carried out by means of scanning electron microscope (SEM), X-ray diffraction analysis, C-V and DLTS spectroscopies. The PMFT induces the generation of A-centers in the near-surface region of silicon, the changes of the crystal lattice parameter and the concentration of free electrons and results in emergence of an extent structural microdefects in subsurface. The obtained experimental data testifies that PMFT is possible to increase the vacancy concentration at subsurface region of silicon.

Transport ◽  
2012 ◽  
Vol 27 (2) ◽  
pp. 196-205 ◽  
Author(s):  
Libor Beneš

The main aim of this work was a study of the microstructure transformations with the residual stress formation that is induced by rolling contact friction and adhesive wore in the wheel–rail system. Several small railsurface samples, we term them as the ‘chips’, and a piece of wheel sample were chosen for the analyses of the surface changes on the wheel–rail surface. A multitude of different experiments were carried out in order to analyse the microstructure changes at the surface and the near-surface region of the material samples and, thus, to contribute to the understanding of the complex wheel–rail rolling contact phenomena – and its degradation mechanisms. The formation of nano-structured martensite and carbides on the rail and wheel surface causes the extremely high microhardness valuees and the strong corrosion resistance of the so called White Etching Layers (WEL).


1995 ◽  
Vol 31 (1) ◽  
pp. 37-39
Author(s):  
G. S. Yablonskii ◽  
D. V. Kundirenko ◽  
L. A. Kulabukhova ◽  
N. Ya. Barash

2019 ◽  
Vol 61 (4) ◽  
pp. 671
Author(s):  
А.Г. Куликов ◽  
Ю.В. Писаревский ◽  
А.Е. Благов ◽  
Н.В. Марченков ◽  
В.А. Ломонов ◽  
...  

The process of the defect structure rearrangement in a lithium tetraborate single crystal under the influence of high voltage external electric field applied along the polar direction [001] is studied with use of X-ray diffractometry. The results are supplemented by measurements of the conductivity kinetics. Under conditions of electric field of 300-500 V/mm strength, a sharp broadening of the 004 reflection diffraction peak and its integral intensity increasing by several times are observed, however its position and shape practically do not change. Under the influence of DC field with a strength in range of 500 to 1500 V/mm, the broadening process slows down, but the rocking curve asymmetry appears as well as its sharp shift to the smaller angles associated with an increase in the lattice parameter along the c-axis. This process is quasi-reversible, since the distorted structure is partially restored at a very slow rate (for several months). Two types of the diffraction peak parameters variation dependencies on the external field are interpreted as the manifestation of two ionic conductivity mechanisms: mobile lithium ions (Li+) at low-intensity electric field and oxygen vacancies (VO2+) at stronger fields. The process of charge carriers’ migration causes the increase of defects concentration and structure changes in the near-surface region of the crystal.


2006 ◽  
Vol 317-318 ◽  
pp. 277-280 ◽  
Author(s):  
Henryk Tomaszewski ◽  
K. Godwod ◽  
Ryszard Diduszko ◽  
F. Carrois ◽  
J.M. Duchazeaubeneix

Shot peening is commonly used to modify material surface layers and improve the strength of metal components. As it occurred the same technique can be applied for brittle ceramics. High compressive stresses up to 2.4 GPa were introduced into near surface region of alumina and zirconia ceramics by ultrasonic shot peening maintaining its surface integrity. Dependence between diameter of tungsten balls, treatment time (at constant mass of balls in the housing and vibration amplitude) and level of compressive stress introduced was determined for both ceramics with nano and micrograins. Coarser grained ceramics was found to be more sensible to structural changes responsible for stress creation than the smaller one. High microplastic deformation in shot peened surface layer of ceramics was observed by X-ray diffraction. An increase of hardness and surface resistance to fracture with increasing level of compressive stress was found.


2001 ◽  
Vol 674 ◽  
Author(s):  
Leonid Muratov ◽  
David Lederman ◽  
Bernard R. Cooper

ABSTRACTThe presence of cracks, phase segregation, or even submicron-sized grain boundaries creates a disruption of the magnetic field response to an externally applied electrical current running through the material. These effects can be detected through the magnetic field leakage in the external near-surface region. Using a computer model of an array of magnetic tunnel junction detectors, magnetic “signatures” of various faults and/or material borders and domains have been calculated using finite element analysis and portrayed by icons. We have considered a number of typical cracks and flaws, of different dimensions and orientations, within the bulk of the component. The database of “signatures” thus generated allows fast recognition of faults and generation of their images in real time. Significant efforts have been made to provide an adequate three-dimensional visualization of the shape and distribution of microcracks, the magnetic field lines, and delineation of the position of the faults in relation to the surface.


2000 ◽  
Vol 610 ◽  
Author(s):  
R. Kalyanaraman ◽  
T. E. Haynes ◽  
V. C. Venezia ◽  
D. C. Jacobson ◽  
H.-J. Gossmann ◽  
...  

AbstractIt has been shown recently that Au labeling can be used to profile vacancy-type defects located near half the projected range (½Rp) in MeV-implanted Si. In this work we have quantified the technique by determining the ratio of vacancies annihilated to decrease in the number of Au atoms trapped (calibration factor ‘k’) for the Au labeling technique. The 3 step experiment involved: 1) a high-energy Si-self implant (HEI) followed by an anneal to form stable vacancy clusters, 2) a controlled removal of vacancies via a medium energy Si self implant and interstitial-cluster dissolution anneal, and finally 3) Au labeling to count the change in vacancy concentration in the near surface region (0.1-1.6μm). It is seen that the Au concentration decreases linearly with increasing interstitial injection and the slope of this decrease determined the number of vacancies per trapped Au atom. The value of k was determined to be 1.2±0.2 vacancies per trapped Au atom.


Author(s):  
R.C. Dickenson ◽  
K.R. Lawless

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.


Author(s):  
John D. Rubio

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.


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