Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs molecular beam epitaxy growth on Si complementary metal oxide semiconductor

Journal of Electronic Materials ◽

10.1007/bf02650380 ◽

1994 ◽

Vol 23 (10) ◽

pp. 1081-1083 ◽

Author(s):

J. A. Walker ◽

K. W. Goossen ◽

J. E. Cunningham ◽

W. Y. Jan

Keyword(s):

Silicon Nitride ◽

Molecular Beam Epitaxy ◽

Diffusion Barrier ◽

Molecular Beam ◽

Composition Dependence ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Gas Composition

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2713119 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1098 ◽

Author(s):

Michael M. Oye ◽

Davood Shahrjerdi ◽

Injo Ok ◽

Jeffrey B. Hurst ◽

Shannon D. Lewis ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Silicon Substrates ◽

Effect Transistor

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Molecular beam epitaxy growth of InAs and In[sub 0.8]Ga[sub 0.2]As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2912086 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1187

Author(s):

Ning Li ◽

Eric S. Harmon ◽

David B. Salzman ◽

Dmitri N. Zakharov ◽

Jong-Hyeok Jeon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Effect Transistor

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Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid micro-ring resonators

Applied Physics Letters ◽

10.1063/1.4790440 ◽

2013 ◽

Vol 102 (5) ◽

pp. 051106 ◽

Author(s):

Feng Qiu ◽

Andrew M. Spring ◽

Feng Yu ◽

Shiyoshi Yokoyama

Keyword(s):

Titanium Dioxide ◽

Silicon Nitride ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ring Resonators

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Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491550 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1406 ◽

Author(s):

Anri Nakajima ◽

Quazi Deen Mohd Khosru ◽

Takashi Yoshimoto ◽

Toshirou Kidera ◽

Shin Yokoyama

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Metal Oxide ◽

Gate Dielectrics ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2117 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2117-2121 ◽

Author(s):

Takashi Uehara ◽

Hiroshi Matsubara ◽

Ryosho Nakane ◽

Satoshi Sugahara ◽

Shin-ichi Takagi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Integration of perovskite oxide dielectrics into complementary metal–oxide–semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier

Journal of Applied Physics ◽

10.1063/1.3641636 ◽

2011 ◽

Vol 110 (6) ◽

pp. 064117 ◽

Author(s):

Biljana Mešić ◽

Herbert Schroeder

Keyword(s):

Metal Oxide ◽

Diffusion Barrier ◽

Oxygen Diffusion ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Perovskite Oxide ◽

Metal Oxide Semiconductor Capacitor

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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.11.118 ◽

2017 ◽

Vol 477 ◽

pp. 179-182 ◽

Author(s):

H.W. Wan ◽

K.Y. Lin ◽

C.K. Cheng ◽

Y.K. Su ◽

W.C. Lee ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

Applied Physics Letters ◽

10.1063/1.2188380 ◽

2006 ◽

Vol 88 (14) ◽

pp. 142113 ◽

Author(s):

H. Luan ◽

H. N. Alshareef ◽

H. R. Harris ◽

H. C. Wen ◽

K. Choi ◽

...

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrodes ◽

Titanium Silicon Nitride ◽

Titanium Silicon

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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276442 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H14-C3H17 ◽

Author(s):

T. D. Lin ◽

P. Chang ◽

H. C. Chiu ◽

M. Hong ◽

J. Kwo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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