Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

2006 ◽  
Vol 88 (14) ◽  
pp. 142113 ◽  
Author(s):  
H. Luan ◽  
H. N. Alshareef ◽  
H. R. Harris ◽  
H. C. Wen ◽  
K. Choi ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrodes ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

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