Young’s modulus and its temperature dependence in 36 to 52 pct nickel-iron alloys

JOM ◽  
1950 ◽  
Vol 2 (9) ◽  
pp. 1120-1125
Author(s):  
M. E. Fine ◽  
W. C. Ellis
2021 ◽  
pp. 2150350
Author(s):  
Yijun Jiang ◽  
Mingyuan Lu ◽  
Shiliang Wang ◽  
Han Huang

Temperature dependence of Young’s modulus of Ag microwhiskers was determined by a laser Doppler vibrometer. The Ag whiskers with diameters in sub-microns were synthesized by the use of physical vapor deposition (PVD). They have a five-fold twinned structure grown along the [1 1 0] direction. The temperature coefficient of Young’s modulus was measured to be [Formula: see text] ppm/K in the range of 300 K to 650 K. The measured values are very close to the reported values of [Formula: see text] ppm/K for bulk Ag single crystals. This finding can benefit the design of Ag-based micro/nano-electromechanical systems or micro/nano-interconnectors operated at elevated or lowered temperatures.


2014 ◽  
Vol 16 (36) ◽  
pp. 19417-19423 ◽  
Author(s):  
T. Botari ◽  
E. Perim ◽  
P. A. S. Autreto ◽  
A. C. T. van Duin ◽  
R. Paupitz ◽  
...  

A thorough study on the mechanical properties of silicene membranes. Young's modulus, Poisson's ratios, critical strain values, edge effects, dynamics of edge reconstructions, temperature dependence and stress distributions were investigated.


RSC Advances ◽  
2016 ◽  
Vol 6 (19) ◽  
pp. 16037-16045 ◽  
Author(s):  
Sergey I. Lukyanov ◽  
Andrei V. Bandura ◽  
Robert A. Evarestov

The temperature dependence of the Young's modulus and Poisson's ratio of a number of TiO2-based four-facetted nanotubes and nanowires are predicted through the calculation of the Helmholtz free energy.


1998 ◽  
Vol 518 ◽  
Author(s):  
H. Kahn ◽  
M.A. Huff ◽  
A.H. Heuer

AbstractSurface-micromachined polysilicon lateral resonant structures were fabricated and used to determine the temperature dependence of the Young's modulus of the polysilicon. This is done by passing a dc current through the beams during resonance testing, resulting in Joule-heating. The temperatures are calibrated by increasing the dc current until the melting point of silicon is attained. The calculated Young's moduli agree well with reported values for single crystal silicon.In addition, metal films were sputter-deposited onto the polysilicon resonators, and similar experiments performed on the composite devices to determine the temperature dependence of the modulus of the sputtered films. Ni films demonstrate a linear decrease in Young's modulus with temperature. TiNi films demonstrate two distinct modulus values with an intermediate transition region, due to the temperature-induced reversible phase transformation exhibited by TiNi.


2017 ◽  
Vol 701 ◽  
pp. 768-773 ◽  
Author(s):  
Mingming Li ◽  
Jiheng Li ◽  
Xiaoqian Bao ◽  
Jiquan Wang ◽  
Yalong Zhao ◽  
...  

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