A Dead-Zone-Free Zero Blind-Zone High-Speed Phase Frequency Detector for Charge-Pump PLL

2020 ◽  
Vol 39 (8) ◽  
pp. 3819-3832 ◽  
Author(s):  
H. Lad Kirankumar ◽  
S. Rekha ◽  
Tonse Laxminidhi
2012 ◽  
Vol 457-458 ◽  
pp. 1178-1182 ◽  
Author(s):  
Cao Yu ◽  
Min Su Kim ◽  
Hyung Chul Kim ◽  
Youn Goo Yang

A high speed Phase-Frequency Detector (PFD) and Charge Pump (CP) are implemented using 0.13µm CMOS process with 1.2 V supply. The PFD is implemented with TSPC (True Single-Phase Clock) and positive edge triggered D flip-flop. Its polarity can be changed by setting the port. The dead zone problem is solved using an additional reset time. A single charge pump is implemented with two compensators. Dual mode CP design makes the charge pump much more flexible in applications. The current mismatch for the two modes is below 4.9 % within the voltage range of from 0.2 to 1.0 V.


Author(s):  
Suraj K. Saw ◽  
Madhusudan Maiti ◽  
Preetisudha Meher ◽  
Alak Majumder

Background & Introduction: With the advent of technology, though the literature highlights many designs of Phase Frequency Detector (PFD), there remains some challenges like area overhead, switching noise near frequency lock point and fast, accurate response to mitigate dead zone and output errors. Methods: In this article, we have unearthed a low power, high speed and dead zone free PFD, which eliminates the switching noise near that lock-in node. This simple design uses lesser number of transistors to obtain smaller estimated layout area of 0.748mm2 and low power of 496.12μW, when operated at 10 GHz frequency at a power supply of 1.8V in 90nm CMOS technology. Results: The simulation reads a phase noise and output noise of -113.142dBc/Hz and -180.712dB at 1MHz offset. The circuit not only runs at a frequency as high as 40GHz, but also compatible to be operated at a power supply of as small as 0.9V. Conclusion: Process Variation analysis performed proves the robustness of the proposed circuit at all process corners. Also, the design gets validated at lower process nodes like 28nm UMC.


2019 ◽  
Vol 13 (7) ◽  
pp. 1056-1062 ◽  
Author(s):  
Amir Fathi ◽  
Morteza Mousazadeh ◽  
Abdollah Khoei

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