A high speed and low power phase-frequency detector and charge-pump

1999 ◽  
Author(s):  
Won-Hyo Lee ◽  
Jun-Dong Cho ◽  
Sung-Dae Lee
Keyword(s):  
Low Power ◽  
High Speed ◽  
Charge Pump ◽  
Phase Frequency Detector ◽  
Frequency Detector

A LOW-VOLTAGE LOW-POWER CMOS PHASE-LOCKED LOOP

2005 ◽  
Vol 14 (05) ◽  
pp. 997-1006 ◽  
Author(s):  
ROBERT C. CHANG ◽  
LUNG-CHIH KUO ◽  
HOU-MING CHEN
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Loop Filter ◽  
Phase Frequency Detector ◽  
Low Power Cmos ◽  
Charge Pump Circuit ◽  
Frequency Detector

A low-voltage low-power CMOS phase-locked loop (PLL) is presented in this paper. It consists of a phase frequency detector, a charge pump, a loop filter, a voltage-control oscillator, and a frequency divider. A new phase frequency detector is proposed to reduce the dead zone and the mismatch effect of the charge pump circuit. A novel charge pump circuit with a small area and wide output range is described. The PLL circuit has been designed using the TSMC 0.35 μm 1P4M CMOS technology. The chip area is 1.08 mm × 1.01 mm. The post-layout simulation results show that the frequency of 900 MHz can be generated with a single supply voltage of 1.5 V. The power dissipation of the circuit is 9.17 mW.

PVT Aware Design of a Dead-zone Free High Speed Phase Frequency Detector in 90nm CMOS

2020 ◽  
Vol 13 (4) ◽  
pp. 516-530
Author(s):  
Suraj K. Saw ◽  
Madhusudan Maiti ◽  
Preetisudha Meher ◽  
Alak Majumder
Keyword(s):  
Low Power ◽  
Power Supply ◽  
High Speed ◽  
Dead Zone ◽  
Cmos Technology ◽  
Switching Noise ◽  
Phase Frequency Detector ◽  
Layout Area ◽  
Frequency Detector ◽  
Lock In

Background & Introduction: With the advent of technology, though the literature highlights many designs of Phase Frequency Detector (PFD), there remains some challenges like area overhead, switching noise near frequency lock point and fast, accurate response to mitigate dead zone and output errors. Methods: In this article, we have unearthed a low power, high speed and dead zone free PFD, which eliminates the switching noise near that lock-in node. This simple design uses lesser number of transistors to obtain smaller estimated layout area of 0.748mm2 and low power of 496.12μW, when operated at 10 GHz frequency at a power supply of 1.8V in 90nm CMOS technology. Results: The simulation reads a phase noise and output noise of -113.142dBc/Hz and -180.712dB at 1MHz offset. The circuit not only runs at a frequency as high as 40GHz, but also compatible to be operated at a power supply of as small as 0.9V. Conclusion: Process Variation analysis performed proves the robustness of the proposed circuit at all process corners. Also, the design gets validated at lower process nodes like 28nm UMC.

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